List of Publications

   

back to top page

2017
2016
2015
2014
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
1999
1998
1997
1996
1995




2017

 

  Journal Papers

 

  International Conferences

 

  Domestic Conferences


スピン軌道相互作用量子ビットに向けたpチャネルシリコン量子ドットの正孔スピン輸送特性
山岡裕,岩崎一真,小田俊理,小寺哲夫 第64回応用物理学会春季学術講演会, 15p-P15-1, March 2017, 神奈川県

自己組織化単分子膜を用いたadhesion lithographyによるMoS2 FETの作製
川那子高暢,居駒遼,Du Wanjing,小田俊理 第64回応用物理学会春季学術講演会, 14p-P4-77, March 2017, 神奈川県

シリコン量子ドットにおける正孔輸送特性の温度依存性
島谷直樹,山岡裕,石原良一,Aleksey Andreev,David Williams,小田俊理,小寺哲夫 第64回応用物理学会春季学術講演会, 15p-P15-2, March 2017, 神奈川県


   Others


2016

 

   Journal Papers


Deionization of Dopants in Silicon Nanofilms Even with Donor Concentration of Greater than 1019 cm−3 T. Tanaka, Y. Kurosawa, N. Kadotani, T. Takahashi, S. Oda, K. Uchida Nano Letters, January 2016 Vo. 16, No. 2, 1143-1149

Utilization self-assembled-monolayer-based gate dielectrics to fabricate molybdenumdisulfide field-effect transistors T. Kawanago, S. Oda Applied Physics Letters, January 2016, Vol. 108, 041605

Synthesis of Ge/Si core/shell nanowires with suppression of branch formation Tomohiro Noguchi, Marolop Simanullang, Zhengyu Xu, Koichi Usami, Tetsuo Kodera, Shunri Oda Applied Physics Express, April 2016, Vo. 9, 055504

Undoped and catalyst-free germanium nanowires for high-performance p-type enhancement-mode field-effect transistors Marolop Simanullang, G. Bimananda M. Wisna, Koichi Usami, Wei Cao, Yukio Kawano, Kaustav Banerjee and Shunri Oda Journal of Materials Chemistry C, April 2016, Vo. 4, 5102

Experimental Study on Deformation Potential (Dac) in MOSFETs: Demonstration of Increased Dac at MOS Interfaces and Its Impact on Electron Mobility Teruyuki Ohashi, Takahisa Tanaka, Tsunaki Takahashi, Shunri Oda, Ken Uchida IEEE Journal of the Electron, Vo. PP, June 2016, 1

Effect of gold migration on the morphology of germanium nanowires grown by a two-step growth method with temperature modulation Zhengyu Xu, Koichi Usami, Marolop Simanullang, Tomohiro Noguchi, Yukio Kawano and Shunri Oda Japanese Journal of Applied Physics, July 2016, Vo. 55, 085002

Formation of three-dimensionally integrated nanocrystalline silicon particles by dip-coating method Shotaro Yamazaki, Yoshifumi Nakamine, Ran Zheng, Masahiro Kouge, Tetsuya Ishikawa, Koichi Usami, Tetsuo Kodera, Yukio Kawano and Shunri Oda Japanese Journal of Applied Physics, September 2016, Vo. 54, 105001

Observation and coherent control of interface-induced electronic resonances in a field-effect transistor J. O. Tenorio-Pearl, E. D. Herbschleb, S. Fleming, C. Creatore, S. Oda, W. I. Milne & A. W. Chin Nature Materials, September 2016

Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices Jie Yu, Kun-ji Chen, Zhong-yuan Ma, Xin-xin Zhang, Xiao-fan Jiang, Yang-qing Wu, Xin-fan Huang and Shunri Oda Chinese Physics B,2016, Vo. 25, 097304-1-5

Electron transport in physically-defined double quantum dots on a highly doped silicon-on-insulator substrate Y. Yamaoka, S. Oda, T. Kodera Applied Physics Letters, 2016, Vo. 109, 113109

 

   International Conferences


Silicon device technology for intelligent communications S. Oda IEEE EDS Minicolloquium, May 2016, Grenoble (invited)

Silicon quantum dots for future electronics and photonics S. Oda International Conference on Microwave and THz Technologies, Photonics and Wireless Communications, May 2016, Yerevan (invited)

Controlling the asymmetric line-shape of charge-trapped induced resonances in a single quantum dot Michiru Maekawa, Jaime Tenorio-Pearl, Ernst Herbschleb, Yu Yamaoka, Tetsuo Kodera, Shunri Oda 9th International Conference on Quantum Dots, May 2016, Jeju

Measurement of charge states in Si/SiGe multiple quantum dots Tomohiro Otsuka, Kenta Takeda, Jun Yoneda, Takumu Honda, Matthieu R. Delbecq, Giles Allison, Marian Marx, Takashi Nakajima, Tetsuo Kodera, Shunri Oda, Yusuke Hoshi, Noritaka Usami, Kohei M. Itoh and Seigo Tarucha Silicon Quantum Electronics Workshop,June 2016,Delft

AC Stark effect and optimal control of a strongly driven Si/SiGe quantum dot spin qubit K. Takeda, J. Kamioka, J. Yoneda, T. Otsuka, M. R. Delbecq, G. Allison, T. Nakajima, T. Kodera, S. Oda, and S. Tarucha Silicon Quantum Electronics Workshop,June 2016,Delft

Coherent control of trapped-charge induced resonances in a field-effect transistor Jaime Oscar Tenorio-Pearl, Ernst David Herbschleb, Celestino, Alex Chin Creatore, and Shunri Oda IEEE Silicon Nanoelectronics Workshop,June 2016,Honolulu

Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors Marolop Dapot Krisman Simanullang,Gde Bimananda Mahardika Wisna,Koichi Usami, Wei Cao, Kaustav Banerjee, and Shunri Oda IEEE Silicon Nanoelectronics Workshop,June 2016,Honolulu

Split-joint Bull''s Eye Structure With Aperture Optimization For Multi-frequency Terahertz Plasmonic Antennas Xiangying Deng, Shunri Oda, Yukio Kawano 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) ,September 2016,Copenhagen

Silicon Terahertz Plasmonic Antenna Takashi Iguchi, Satoshi Ihara, Shunri Oda, Yukio Kawano 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) ,September 2016,Copenhagen

A Wide Band And Flexible Terahertz Detector With Carbon Nanotubes Daichi Suzuki, Shunri Oda, Yukio Kawano 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) ,September 2016,Copenhagen

Quantum dot devices: technology vehicles for nanoscale physics and paths for future applications S. Oda ESSDERC, September 2016,Lausanne (invited)

Adhesion lithography to fabricate MoS2 FETs with self-assembled monolayer-based gate dielectrics T. Kawanago, R. Ikoma, W. Du, S. Oda ESSDERC, September 2016,Lausanne

Self-Assembled Monolayer-Based Gate Dielectrics for MoS2 FETs T. Kawanago, S. Oda ECS Meeting, October 2016, Honolulu

Silicon quantum dot devices for future electronics S. Oda International Workshop on Advanced Materials and Nanotechnology, November 2016, Hanoi (invited)

Electrical Properties and Equivalent-Circuit Model of Physically-Defined Silicon Triple Quantum Dots Charged with Few Electrons S. Hiraoka, K. Horibe, T.Kodera and S. Oda Materials Research Society Fall Meeting, November 2016, Boston

Very Narrow Linewidths in the Fluorescence from Germanium-Vacancy Centers in Nanodiamonds Y. Shimamoto, T. Suto, H. Ozawa, M. Hatano, S.Oda, T. Iwasaki Materials Research Society Fall Meeting, November 2016, Boston

Silicon device technology for intelligent communications S. Oda Global Nanotechnology 2016, December 2016, Las Vegas (invited)

Coupled Quantum Dots on SOI as Highly Integrated Si Qubits S. Oda IEDM, December 2016, San Francisco (invited)

 

   Domestic Conferences


自己組織化単分子膜をゲート絶縁膜に用いた低電圧駆動MoS2 FETの作製
川那子高暢,小田俊理 第63回応用物理学会春季学術講演会, 20a-P4-71, March 2016, 東京都

高濃度ドーピングしたシリコンを用いた単一量子ドットの正孔輸送特性
山岡裕,小田俊理,小寺哲夫
第63回応用物理学会春季学術講演会,19p-P4-12,March 2016,東京都

【第7回シリコンテクノロジー分科会論文賞受賞記念講演】スピン量子デバイスに向けた少数電子シリコン量子ドットの研究
堀部浩介,小寺哲夫,小田俊理
第63回応用物理学会春季学術講演会,21a-S422-3,March 2016,東京都

p型Si二重量子ドット内の少数正孔領域でのパウリスピンブロッケードの観測
岩崎一真,小寺哲夫,小田俊理
第63回応用物理学会春季学術講演会,19p-P4-11,March 2016,東京都

ダイヤモンド粒子中に形成したGeVセンターの発光特性
島本祐輔,岩崎孝之,須藤健瑠,波多野睦子,小田俊理
第63回応用物理学会春季学術講演会,19p-H103-4,March 2016,東京都

極薄膜SOIを用いた量子ドットデバイスの作製と評価
西野孝夫,平岡宗一郎,井原敏,小寺哲夫,小田俊理
第63回応用物理学会春季学術講演会,19p-P4-8,March 2016,東京都

極低温下連続マイクロ波照射下での単一量子ドットの電子輸送特性
前川未知瑠,テノリオぺルル ハイメ,ヘルブスレブ エルンスト,山岡裕,小寺哲夫,小田俊理
第63回応用物理学会春季学術講演会,19p-P4-10,March 2016,東京都

Ge/Siコアシェルナノワイヤの熱電性能測定
野口智弘,Simanullang Marolop,宇佐美浩一,小寺哲夫,小田俊理
第63回応用物理学会春季学術講演会,20p-P7-9,March 2016,東京都

多層Alゲート構造を用いたSi-MOS量子ドットデバイス作製プロセスの検討
本田拓夢,米田淳,武田健太,川那子高暢,小寺哲夫,樽茶清悟,小田俊理
第63回応用物理学会春季学術講演会,19p-P4-7,March 2016,東京都

ナノダイヤモンド中に形成したGeVセンターからの単一光子放出
島本 祐輔、須藤 建瑠、波多野 睦子 睦子、小田 俊理、岩崎 孝之
第77回応用物理学会秋季学術講演会,13p-A26-16,September 2016,新潟市

Multifunctional Phosphonic Acid Self-Assembled Monolayer for Metal Patterning
杜 婉静、川那子 高暢、小田 俊理
第77回応用物理学会秋季学術講演会,13p-A37-12,September 2016,新潟市

p型シリコン2重量子ドットにおけるパウリスピンブロッケード領域内漏れ電流の磁場依存性
山岡 裕、岩崎 一真、小田 俊理、小寺 哲夫
第77回応用物理学会秋季学術講演会,13p-B13-10,September 2016,新潟市

シリコン量子ドットにおける表面酸化膜中電荷のコヒーレンス効果
前川 未知瑠、テノリオぺルル ハイメ、ヘルブスレブ エルンスト、山岡 裕、小寺 哲夫、小田 俊理
第77回応用物理学会秋季学術講演会,13p-B13-11,September 2016,新潟市

シリコン3重量子ドットの等価回路シミュレーション
平岡 宗一郎、堀部 浩介、小寺 哲夫、小田 俊理
第77回応用物理学会秋季学術講演会,13p-B13-8,September 2016,新潟市

低温下におけるGe/Si コアシェルナノワイヤの電気特性評価
高木 寛之、野口 智弘、Simanullang Marolop、宇佐美 浩一、小寺 哲夫、小田 俊理
第77回応用物理学会秋季学術講演会,14p-D62-13,September 2016,新潟市

Ge/Si コアシェル ナノワイヤの電気伝導率における径依存性
野口 智弘、Simanullang Marolop、宇佐美 浩一、小寺 哲夫、小田 俊理
第77回応用物理学会秋季学術講演会,15a-P9-2,September 2016,新潟市

光熱起電力を用いたテラヘルツ帯検出器の熱解析及びイメージング応用
鈴木 大地、小田 俊理、河野 行雄
第77回応用物理学会秋季学術講演会,16a-B2-12,September 2016,新潟市

単層カーボンナノチューブフィルムを用いたテラヘルツ波検出器における熱電効果の向上
落合 雄輝、鈴木 大地、小田 俊理、河野 行雄
第77回応用物理学会秋季学術講演会,16a-B2-13,September 2016,新潟市


   Others

  

Nanoscale Silicon Devices
Shunri Oda and David K. Ferry CRC Press, 1-288


2015

 

   Journal Papers


Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate K. Horibe, T. Kodera, S. Oda Applied Physics Letters, February 2015 Vo. 106, 083111

Back-action-induced excitation of electrons in a silicon quantum dot with a single-electorn transistor charge sensor K. Horibe, T. Kodera, S. Oda Applied Physics Letters, February 2015 Vol. 106, 053119

Propsal for fast-response radial Schottky junction photodetectors based on silicon nanowires A. Surawijaya, Y. Kawano, S. Oda Japanese Journal of Applied Physics, February 2015 Vol. 54, 034301

Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy D. Zhang, Z. Liu, D. Zhang, Z. Zhang, J. Zhang, J. Zhang, Y. Zuo, C. Xue, C. Li, S. Oda, B. Cheng, Q. Wang The Journal of Physical Chemistry, June 2015 Vol. 119, 17842-17847

Quantum dots in single electron transistors with ultrathin silicon-on-insulator structures S. Ihara, A. Andreev. D. A. Williams, T. Kodera, S. Oda Applied Physics Letters, July 2015 Vol. 107, 013102

Formation of three-dimensionally integrated nanocrystalline sillicone particles by dip-corting method S. Yamazaki, Y. Nakamine, R. Zheng, M. Kouge, T. Ishikawa, K. Usami, T. Kodera, Y. Kawano, S. Oda Japanese Journal of Applied Physics, September 2015 Vol. 54, 105001

 

   International Conferences


Single-electron spin resonance in a Si/SiGe double quantum dot with a micromagnet K. Takeda, J. Kamioka, T. Obata, T. Otsuka, T. Nakajima, M. Delbecq, S, Amaha, J. Yoneda, A. Noiri, R. Sugawara, T. Kodera, S. Oda, S. Tarucha APS March Meeting 2015, March 2015, Texas

Coupled quantum dot devices T. Honda, K. Horibe, R. Mizokuchi, Y. Lu, K. Iwasaki, S. Hiraoka, T. Kodera, S. Oda INC11, May 2015, Fukuoka

Fabrication of silicon nanocrystarls by VHF plasma processes S. Yamazaki, K. Ikemoto, Y. Shimamoto, S. Oda INC11, May 2015, Fukuoka

Fabrication and characterization of physically-defined double quantum dots without unintentional localized states on highly-doped silicon substrates Y. Yamaoka, T. Kodera, S. Oda IEEE 2015 Silicon Nanoelectronics Workshop, June 2015, Kyoto

Fabrication of a highly controllable Si-MOS quantum dot device T. Honda, J. Yoneda, K. Takeda, T. Kodera, S. Tarucha, S. Oda IEEE 2015 Silicon Nanoelectronics Workshop, June 2015, Kyoto

Charge sensing of p-channel double quantum dots fabricated on (110) silicon substrate K. Iwasaki, T. Kodera, S. Oda IEEE 2015 Silicon Nanoelectronics Workshop, June 2015, Kyoto

A Ge/Si core/chell nanowire with controlled low temperature grown Si shell thickness T. Noguchi, M. D. K. Simanulang, Z. Xu, K. Usami, Y.Kawano, T. Kodera, S. Oda 20th Biennial European Conference on Chemical Vapor Deposition, July 2015, Sempach, Switzerland (invited)

A strongly driven single-spin qubit in a Si/SiGe double quantum dot with a micro-magnet K. Takeda, J. Kamioka, T. Obata, T. Otsuka, T. Nakajima, M. R. Delbecq, S. Amaha, J. Yoneda, A. Noiri, R. Sugawara, T. Kodera, S. Oda, S. Tarucha Spintech VV, August 2015, Besei, Switzerland

Fabrication and characterization of gate-defined small Si-MOS quantum dot devices J. Yoneda, T. Honda, K. Takeda, M. Marx, T. Otsuka, T. Nakajima, M. R. Delbecq, S. Ameha, G. Alison, T. kodera, S. Oda, S. Tarucha Silicon Quantum Electronics Workshop 2015, August 2015, Takamatsu, Japan

Increasing valley-splitting in Si/SiGe quantum dots M. Marx, K. Takeda, J. Yoneda, G. Allison, T. Honda, M. Delbecq, T. Otsuka, T. Nakajima, S. Amaha, T. Kodera, S. Oda, S. Tarucha Silicon Quantum Electronics Workshop 2015, August 2015, Takamatsu, Japan

Sillicon device technology for intelligent communications S. Oda EE Seminar(EPFL), September 2015, Lausanne, Switzerland

Sillicon nanocrystals for future electronics and photonics S. Oda ICANS26, September 2015, Aachen, Germany (invited)

 

   Domestic Conferences


近接場光顕微鏡を用いた中赤外ログスパイラルアンテナの解析
藤村直紀,石川昂,陸昂義,小田俊理,河野行雄 第62回応用物理学会春季学術講演会, 11a-A12-7, March 2015, 平塚市

ゲート制御性を向上したSi-MOS量子ドットデバイスの作製と評価
本田拓夢,小寺哲夫,米田淳,武田健太,樽茶清悟,小田俊理
第62回応用物理学会春季学術講演会, 11p-A23-4, March 2015, 平塚市

Ge/Siコアシェルナノワイヤ作製に向けたナノワイヤ形状に対するSiシェル膜圧依存性の観測
野口智弘,森田広大,Marolop Simanullang, Xu Zhengyu,宇佐美浩一,河野行雄,小寺哲夫,小田俊理
第62回応用物理学会春季学術講演会, 12p-A20-4, March 2015, 平塚市

Ge/Siコアシェルナノワイヤの熱電特性評価
森田広大,野口智弘,宇佐美浩一,Marolop Simanullang,河野行雄,小寺哲夫,小田俊理
第62回応用物理学会春季学術講演会, 12p-A20-5, March 2015, 平塚市

リソグラフィにより形成されたシリコン2重結合量子ドット内の電子スピン状態のパルス測定
堀部浩介,小寺哲夫,小田俊理
第62回応用物理学会春季学術講演会, 12a-P13-10, March 2015, 平塚市

Si2重量子ドット中の単一電子スピンの高速独立操作
武田健太,神岡純,小幡利顕,大塚朋廣,中島峻,Matthieu Delbecq,天羽真一,米田淳,Giles Alison,野入亮人,菅原烈,小寺哲夫,小田俊理,樽茶清悟
日本物理学会 2015秋季大会, September 2015, 大阪市


   Others

 

2014

   Journal Papers


GHz photon-activated hopping between localized states in a silicon quantum dot T. Ferrus, A. Rossi, A. Andreev, T. Kodera, T. Kambara, W. Lin, S. Oda and D. A. Williams New Journal of Physics, January 2014 vol. 16, 013016 (18 pages)

Experimental study on SET/RESET conditions for graphene resistive random access memory A. Shindome, T. Tsunaki, S. Oda, K. Uchida Japanese Journal of Applied Physics, February 2014 Vol. 53,04EN02 (5 pages)

Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts J. Kamioka, T. Kodera, K. Takeda, T. Obata, S. Tarucha and S. Oda Journal of Applied Physics, May 2014 vol. 115, 203709 (5 pages)

Surface passivation of germanium nanowires using Al2O3 and HfO2 deposited via atomic layer deposition (ALD) technique
Marolop Simanullang*, Koichi Usami, Tomohiro Noguchi, Akhmadi Surawijaya, Tetsuo Kodera, Yukio Kawano, and Shunri Oda
Japanese Journal of Applied Physics, June 2014 vol. 53, 06JG04

Fabrication and characterization of p-channel Si double quantum dots Ko Yamada, Tetsuo Kodera, Tomohiro Kambara, and Shunri Oda Applied Physics Letters, September 2014 vol. 105, 113110 (5 pages)

In situ monitoring of silicon nanocrystal formation with pulsed SiH4 supply by optical emission spectroscopy of Ar plasma K. Ikemoto, Y. Nakamine, Y. Kawano, S. Oda Japanese Journal of Applied Physics, October 2014 Vol. 53, 116102 (4 pages)

 

   International Conferences


Si quantum dots and Si/Ge nanowires for future electronics and photonics S. Oda International Conference on Metamaterials and Nanophysics, April 2014, Varadero, Cuba (invited)

Direct Imaging of Carrier Dynamics in Si Nanocrystals by Using Femtosecond Time-Resolved Photoemission Electron Microscopy Ayse  Seyhan, Keiki  Fukumoto, Yuki  Yamada, Takashi  Matsuki, Ken  Onda, Shinya  Koshihara, Yoshifumi  Nakamine, Kazufumi  Ikemoto, Kengo  Funaki, Shunri  Oda Materials Research Society, EE8.05, April 2014, San Francisco

Silicon quantum dot devices for future electronics S. Oda 29th International Conference on Microelectronics, May 2014, Belgrade, Serbia (invited)

Fabrication of Si quantum dots using SF6 dry etching technique Yi. Lu, Tetsuo. Kodera, Kosuke Horibe , and Shunri Oda International Conference on Quantum Dots (QD 2014), M70, May 2014, Pisa

Terahertz detector based on highly-aligned carbon nanotubes N. Fujimura, X. He, T. Juntunen, Q. Zhang, W. Gao, R. H. Hauge, K. J. Erickson, A. A. Talin, T. Kodera, S. Oda, F. Leonard, Y. Kawano, J. Kono 4th EOS Topical Meeting on Terahertz Science & Technology (TST 2014), May 2014, Camogli

Visualization of ultrafast electron dynamics using time-resolved photoemission electron microscopy
Keiki Fukumoto, Yuki Yamada, Takashi Matsuki, Ken Onda,  Tomohiro Noguchi, Raisei Mizokuchi,  Shunri Oda, Shin-ya Koshihara
International Conference on Ultrafest Phenomena, July 2014, Okinawa

Change the future through the strong collaborations among our society
S. Oda
Solid State Devices and Materials Conference, Rump Session B, September 2014, Tsukuba (invited)

Silicon quantum dot devices for future electronics
S. Oda The 4th International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, October 2014, Taipei (invited)

Silicon quantum dots for future electronics and photonics S. Oda Workshop on  Advancement of Group IV Nanostructures Nanophotonics and Nanoelectronics, November 2014, Kobe (invited)

 

   Domestic Conferences
 


Ge/Si コアシェルナノワイヤとSiナノワイヤのヘテロ接合作製
森田広大,野口智弘,MarolopSimanullang,宇佐美浩一,小寺哲夫,小田俊理 第61回応用物理学会春季学術講演会, 18p-F11-12, March 2014, 相模原市

バルク/SOI FinFET の自己加熱およびアナログ特性の最適化
高橋綱己,別府伸耕,陳君ろ,小田俊理,内田建
第61回応用物理学会春季学術講演会, 19a-E4-5, March 2014, 相模原市

SF6ドライエッチングによるシリコン量子ドットの作製と評価
呂逸,小寺哲夫,堀部浩介,小田俊理
第61回応用物理学会春季学術講演会, 19p-F12-6, March 2014, 相模原市

ホール輸送によるp型二重結合量子ドットの磁場依存性
山田宏,小寺哲夫,蒲原知宏,堀部浩介,河野行雄,小田俊理
第61回応用物理学会春季学術講演会, 19p-F12-7, March 2014, 相模原市

Si/SiGe二重量子ドットによるパウリスピンブロッケードの観測
神岡純,武田健太,小幡利顕,小寺哲夫,樽茶清悟,小田俊理
第61回応用物理学会春季学術講演会, 19p-F12-8, March 2014, 相模原市

形状異方性を持つ強磁性体を用いた局所磁場によるシリコン量子ドット中の電子スピ ン共鳴法の検討
蒲原知宏,小寺哲夫,小田俊理
第61回応用物理学会春季学術講演会, 19p-F12-9, March 2014, 相模原市

電荷センサを集積した三角形状三重量子ドット構造による電荷フラストレーション
溝口来成,小寺哲夫,堀部浩介,小田俊理
第61回応用物理学会春季学術講演会, 19p-F12-10, March 2014, 相模原市

グラフェン抵抗変化型メモリの3端子動作に関する研究
新留彩,高橋綱己,小田俊理,内田建
第61回応用物理学会春季学術講演会, 20a-E2-5, March 2014, 相模原市

2つのシリコン2重量子ドットデバイス間の静電結合観測 堀部浩介,小寺哲夫,小田俊理 第75回応用物理学会秋季学術講演会, 17p-A16-1, September 2014, 札幌

2つのシリコン2重量子ドットデバイス間の静電結合観測 呂逸,堀部浩介,小寺哲夫,小田俊理 第75回応用物理学会秋季学術講演会,17p-A16-2, September 2014, 札幌

ナノツリーの発生を抑制したGe/Siコアシェルナノワイヤ成長 野口智弘,森田広大,Marolop Simanullang,Zhengyu Xu,宇佐美浩一,河野行雄,小寺哲夫,小田俊理 第75回応用物理学会秋季学術講演会,18p-A6-3, September 2014, 札幌

アンドープ基板を用いたSi/SiGe量子ドットデバイスのノイズ評価 本田拓夢,武田健太,神岡純,米田淳,Marian Marx,小寺哲夫,樽茶清悟,小田俊理 第75回応用物理学会秋季学術講演会,19a-A19-11, September 2014, 札幌

表面修飾したシリコンナノ結晶とP3HTの複合体における光伝導特性評価 舩木健伍,山崎将太郎,宇佐美浩一,河野行雄,野崎智洋,小田俊理 第75回応用物理学会秋季学術講演会,19a-A6-6, September 2014, 札幌

電気泳動を用いたディップコーティング法によるシリコンナノ結晶の配列制御 山崎将太郎,舩木健伍,宇佐美浩一,河野行雄,小田俊理 第75回応用物理学会秋季学術講演会,19a-A6-7, September 2014, 札幌

GaAs/AlGaAsを用いたテラヘルツ帯チューナブル検出素子のゲート電圧による出力変調とキャリア緩和過程 平野智之,鈴木大地,小田俊理,河野行雄 第75回応用物理学会秋季学術講演会,19p-C6-1, September 2014, 札幌

FDTD法によるテラヘルツ帯プラズモニックアンテナの小型化検討 井原敏,小田俊理,河野行雄 第75回応用物理学会秋季学術講演会,19p-C6-8, September 2014, 札幌


   Others

  Design of tunnel FET based on Ge nanowires M. Simanullang, 宇佐美浩二, 小寺哲夫, 河野行雄, K. Banerjee, 小田俊理 東京工業大学COI-Tプログラム平成25年度成果報告会, P-1, March 2014, 東京

 

2013

   Journal Papers


Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors Tsunaki Takahashi, Nobuyasu Beppu, Kunro Chen, Shunri Oda, and Ken Uchida Japanese Journal of Applied Physics, February 2013 vol. 52, pp.04CC03

Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High Performance Electron Devices Susoma Jannatul Ferdous, Yoshifumi Nakamine, Tetsuo Kodera,
Koichi Usami, Yukio Kawano, Shunri Oda
Japanese Journal of Applied Physics, March 2013 vol.52, pp.04CH08

Dual Function of Single Electron Transistor Coupled with Double Quantum Dot:
Gating and Charge Sensing
T. Kambara, T. Kodera, Y. Arakawa and Shunri Oda Japanese Journal of Applied Physics, March 2013 vol. 52, pp.04CJ01

Characterization and suppression of low-frequency noise in Si/SiGe quantum point contacts and quantum dots K. Takeda, T. Obata, Y. Fukuoka, W. M. Akhtar, J. Kamioka, T. Kodera, S. Oda,
and S. Tarucha
Applied Physics Letters, March 2013 vol .102 pp.123113

GaAs/AlGaAs field-effect transistor for tunable terahertz detection and spectroscopy with built-in signal modulation Daichi Suzuki, Shunri Oda, and Yukio Kawano Applied Physics Letters, March 2013 vol .102 122102

 

   International Conference


NeoSilicon based nanoelectromechanical information devices S. Oda ICEVENT 2013 January 2013 Tokyo

High Density Vertical Silicon Nanowires for Photodetector Applications Akhmadi Surawijaya, Tetsuo Kodera, Yukio Kawano, and Shunri Oda IEEE EDS WIMNACT-37 February 2013 Tokyo

Fabrication and characterization of bottom-up Si Nanowire Tomohiro Noguchi, Tetsuo Kodera, Marolop Simanullang, Akhmadi Surawijaya, Koichi Usami, Yukio Kawano and Shunri Oda? IEEE EDS WIMNACT-37 February 2013 Tokyo

Fabrication of Ge/Si core/shell nanowires using size controlled Au nanoparticles as Vapor-Liquid-Solid growth catalysts Tomoya Shoji, Tetsuo Kodera, Tomohiro Noguchi, Kouichi Usami, Yukio Kawano and Shunri Oda IEEE EDS WIMNACT-37 February 2013 Tokyo

Terahertz spectroscopic signal modulation by the gate voltage with a GaAs/AlGaAs field-effect transistor Daichi Suzuki, Shunri Oda and Yukio Kawano IEEE EDS WIMNACT-37 February 2013 Tokyo

Terahertz imaging of crystalline polyhydroxybutyrates Nobuhiro Kondo, Shinya Ishii, Daichi Suzuki, Takayoshi Kuga, Shunri Oda, Yukio Kawano and Hiromichi Hoshina IEEE EDS WIMNACT-37 February 2013 Tokyo

Terahertz detection with antenna-coupled heavily P-doped Si quantum dots Takayoshi Kuga, Luca Crespi, Jun Kamioka, Daichi Suzuki, Tetsuo Kodera, Shunri Oda and Yukio Kawano IEEE EDS WIMNACT-37 February 2013 Tokyo

Impact of Deformation Potential Increase at Si/SiO2 Interfaces on Stress-Induced Electron Mobility Enhancement in MOSFET Teruyuki Ohashi, Shunri Oda and Ken Uchida IEEE EDS WIMNACT-37 February 2013 Tokyo

Surface Plasmon Enhanced Light Emission from Silicon Nanocrystals A. Boudraa, A. Seyhan, Y. Nakamine, Y. Ogawa, F. Minami, Y. Kawano and S. Oda IEEE EDS WIMNACT-37 February 2013 Tokyo

Fabrication of MOS structure gate-defined Si/SiGe quantum dot device Jun Kamioka, Tetsuo Kodera, Toshiaki Obata, Kenta Takeda, Waseem. M. Akhtar, Seigo Tarucha and Shunri Oda? IEEE EDS WIMNACT-37 February 2013 Tokyo

Observation of Few-Hole Regime throughp-channel Si Double Quantum Dots Ko Yamada, Tetsuo Kodera, Tomohiro Kambara, Yukio Kawano and Shunri Oda IEEE EDS WIMNACT-37 February 2013 Tokyo

Two-electron silicon double quantum dots fabricated for spin-based qubit application K. Horibe, T. Kodera, T. Kambara, Y. Kawano and S. Oda IEEE EDS WIMNACT-37 February 2013 Tokyo

Synthesis of Ge nanowires far below AuGe eutectic temperature, their characterisation and device fabrication M. Simanullang, T. Noguchi, A. Surawijaya, K. Usami, T. Kodera, Y. Kawano and S. Oda IEEE EDS WIMNACT-37 February 2013 Tokyo

Observation of electron transitions in triple quantum dot by using charge sensor R. Mizokuchi, T. Kodera, K. Horibe, Y. Kawano, Y. Arakawa and S. Oda IEEE EDS WIMNACT-37 February 2013 Tokyo

Demonstration of large charging energy in quantum dots fabricated on ultrathin SOI Satoshi Ihara, Tetsuo Kodera, Kosuke Horibe, Yukio Kawano, Ken Uchida and Shunri Oda IEEE EDS WIMNACT-37 February 2013 Tokyo

Micro magnets on lithographically-defined Si double quantum dots for electron spin resonance Tomohiro Kambara, Tetsuo Kodera, Yukio Kawano, Yasuhiko Arakawa and Shunri Oda IEEE EDS WIMNACT-37 February 2013 Tokyo

NeoSilicon based nanoelectromechanical information devices S. Oda ICMAT 2013 February 2013 Singapore

Direct measurement of the valley splitting in a few-electron silicon quantum dot using charge sensor source-drain bias spectroscopy K. Horibe, T. Kodera, and S. Oda

EP2DS-20/MSS-16 July 2013 Wroclaw, Poland


Few-electron silicon single and double quantum dots fabricated in a metal-oxide-semiconductor structure T. Kodera, K. Horibe, Y. Arakawa, and S. Oda EP2DS-20/MSS-16 July 2013 Wroclaw, Poland

In-Situ Monitoring of Silicon Nanocrystal Deposition with Pulsed SiH4 Supply by Optical Emission Spectroscopy of Ar Plasma K.Ikemoto, Y.Nakamine, Y.Kawano, and S.Oda Solid State Devices and Materials Conference September 2013 Fukuoka

Reduction of Charge Noise in Dual-Gate Si/SiGe Quantum Point Contact J.Kamioka, T.Kodera, T.Obata, K.Takeda, W.M.Akhtar, S.Tarucha, and S.Oda Solid State Devices and Materials Conference September 2013 Fukuoka

Experimental Study on SET/RESET Conditions for Graphene ReRAM Aya Shindome, Tsunaki Takahashi, Shunri Oda, and Ken Uchida Solid State Devices and Materials Conference September 2013 Fukuoka

Silicon Quantum Dots for Future Nanoelectronics S. Oda International Semiconductor Conference Dresden - Grenoble September 2013 Dresden

Silicon Quantum Dot Devices for Future Electron Devices S. Oda IEEE NMDC September 2013 Tainan

 

   Domestic Conferences

 


熱電変換素子に向けたGe/Si コアシェルナノワイヤの作製 小路智也,小寺哲夫,野口智弘,宇佐美浩一,河野行雄,小田俊理 第60回応用物理学会春季学術講演会, March 2013 神奈川県

微小磁性体電極集積によるシリコン2重結合量子ドットへの2軸磁場印加 蒲原知宏,小寺哲夫,河野行雄,小田俊理 第60回応用物理学会春季学術講演会, March 2013 神奈川県

熱配慮設計によるFinFETアナログ特性の最適化 高橋綱己,別府伸耕,小田俊理,内田建 第60回応用物理学会春季学術講演会, March 2013 神奈川県

歪みによる電子移動度向上へMOS界面における変形ポテンシャル上昇が与える影響 大橋輝之,小田俊理,内田建 第60回応用物理学会春季学術講演会, March 2013 神奈川県

GaAs/AlGaAsを用いたテラヘルツ帯分光器のゲート電圧による出力変調? 鈴木大地,小田俊理,河野行雄 第60回応用物理学会春季学術講演会, March 2013 神奈川県

架橋・非架橋構造のグラフェン抵抗変化型メモリの書込・消去特性? 新留 彩,別府伸耕,高橋綱己,小田俊理,内田 建 第60回応用物理学会春季学術講演会, March 2013 神奈川県

チャージセンサによるシリコン2重結合量子ドットの少数電子状態観測 堀部浩介,小寺哲夫,蒲原知宏,河野行雄,小田俊理 第60回応用物理学会春季学術講演会, March 2013 神奈川県

三角形状に配置したシリコン三重量子ドットの電子輸送特性 溝口来成,小寺哲夫,堀部浩介,河野行雄,小田俊理 第60回応用物理学会春季学術講演会, March 2013 神奈川県

広帯域アンテナを結合したシリコン量子ドットによるテラヘルツ波検出 陸昂義,神岡純,小寺哲夫,小田俊理,河野行雄 第74回応用物理学会秋季学術講演会, September 2013 京田辺市

グラフェン抵抗変化型メモリのSET/RESET条件に関する研究 新留彩,高橋綱己,小田俊理,内田建 第74回応用物理学会秋季学術講演会, September 2013 京田辺市

シリコンナノ結晶とP3HTの複合体における光伝導特性評価 舩木健伍,近藤信啓,宇佐美浩一,小寺哲夫,河野行雄,野崎智洋,小田俊理 第74回応用物理学会秋季学術講演会, September 2013 京田辺市

SiH4パルス供給によるArプラズマ発光の増大と生成したシリコンナノ結晶の関 係 池本和史,中峯嘉文,河野行雄,小田俊理 第74回応用物理学会秋季学術講演会, September 2013 京田辺市

Si/SiGe系MOS構造量子ポイントコンタクトの特性評価 神岡純,小寺哲夫,武田健太,小幡利顕,Waseem. M. Akhtar,樽茶清悟,小田俊理 第74回応用物理学会秋季学術講演会, September 2013 京田辺市

ホール輸送によるp型二重結合量子ドットの特性評価 山田宏,小寺哲夫,蒲原知宏,河野行雄,小田俊理 第74回応用物理学会秋季学術講演会, September 2013 京田辺市

チャージセンサのバックアクションによるシリコン量子ドット内電子励起の観測 堀部浩介,小寺哲夫,河野行雄,小田俊理 第74回応用物理学会秋季学術講演会, September 2013 京田辺市

三角形状に配置したシリコン三重量子ドットのチャージセンシング 溝口来成,小寺哲夫,堀部浩介,河野行雄,荒川泰彦,小田俊理 第74回応用物理学会秋季学術講演会, September 2013 京田辺市

不純物のイオン化エネルギー増大によるナノワイヤトランジスタの電気的特性に与え る影響 黒澤裕也,角谷直哉,高橋綱己,大橋輝之,小田俊理,内田建 第74回応用物理学会秋季学術講演会, September 2013 京田辺市

微細径Ge/Siコアシェルナノワイヤの作製と評価 野口智弘,小寺哲夫,小路智也,Simanullang Marolop,宇佐美浩一,河野行雄,小田俊理 第74回応用物理学会秋季学術講演会, September 2013 京田辺市

VHFプラズマにより作製したナノ結晶シリコン中のトラップの評価 近藤信啓,舩木健伍,中峯嘉文,宇佐美浩一,小寺哲夫,河野行雄,小田俊理 第74回応用物理学会秋季学術講演会, September 2013 京田辺市

熱特性モデル化による回路中のFinFET動作温度評価手法 高橋綱己,小田俊理,内田建 第74回応用物理学会秋季学術講演会, September 2013 京田辺市


   Seminar


NeoSilicon based nanoelectromechanical information devices S. Oda CFAED Seminar, March 2013 TU Dresden

 


   Others

著書

VLS Geナノワイヤ成長  小田俊理  ナノワイヤ最新技術の基礎と応用展開 (2013)     

 

 

2012

   Journal Papers


A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure Muhammad Amin Sulthoni, Tetsuo Kodera, Yukio Kawano, and Shunri Oda Japanese Journal of Applied Physics, February 2012 vol. 51, pp.02BJ10

Conduction Bottleneck in Silicon Nanochain Single Electron Transistors Operating at Room Temperature Muhammad A. Rafiq, Katsunori Masubuchi, Zahid A. K. Durrani, Alan Colli, Hiroshi Mizuta, William I. Milne, and Shunri Oda Japanese Journal of Applied Physics, February 2012 vol.51, pp.025202

Temperature Evolution of Spin Polarized Electron Tunneling in Silicon Nanowire-Permalloy Lateral Spin Valve System Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, YoshiChika Otani, Naoki Fukata, Koji Ishibashi, and Shunri Oda Applied Physics Express, March 2012 vol. 5, pp.045001

High ON/OFF ratio and multimode transport in silicon nanochains field effect Muhammad A. Rafiq, Katsunori Masubuchi, Zahid A. K. Durrani, Alan Colli, Hiroshi Mizuta, William I. Milne, and Shunri Oda Applied Physics Letters, March 2012 vol .100 pp.113108

Localization effects in the tunnel barriers of phosphorus-doped silicon T. Ferrus, A. Rossi, W. Lin, D. A. Williams, T. Kodera, and S. Oda AIP Advances, April 2012 vol .2 022114

Key capacitive parameters for designing single-electron transistor charge sensors K. Horibe, T. Kodera, T. Kambara, K. Uchida, and S. Oda Journal of Applied Physics, May 2012 111 093715

Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots G. Yamahata, T. Kodera, H. O. H. Churchill, K. Uchida, C. M. Marcus, and S. Oda Physical Review B, September 2012 86 115322

Photoluminescence of Nanocrystalline Silicon Quantum Dots with Various Sizes and Various Phosphorus Doping Concentrations prepared by Very High Frequency Plasma Ken Someno, Kouichi Usami, Tetsuo Kodera, Mutsuko Hatano, Shunri Oda Japanese Journal of Applied Physics, October 2012 51 115202-1-4


   International Conferences


Manifesting a 2D Layer of DNA Origami Tiles Using Base-Pair Shape Recognition Ian Robertson, Yasuko Yanagida and Shunri Oda IEEE NEMS 2012 March 2012 Kyoto

Silicon nanocrystal memory Shunri Oda and Shaoyun Huang Materials Research Society April 2012 San Francisco

Low-temperature growth of Ge nanowires by vapor-liquid-solid chemical vapor deposition Marolop Simanullang, Ayse Seyhan, Koichi Usami, Tetsuo Kodera, Yukio Kawano, Shunri Oda Electrochemical Society May 2012 Seatle

NeoSilicon based nanoelectromechanical information devices S. Oda 28th International Conference on Microelectronics May 2012 Nis, Serbia

Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot
J.Kamioka, T. Kodera, K. Horibe, Y. Kawano, and S. Oda
IEEE Silicon Nanoelectronics Workshop June 2012 Honolulu

Microwave manipulation of electrons in silicon quantum dots T. Ferrus, A. Rossi, T. Kodera, T. Kambara, W. Lin, S. Oda, and D.A. Williams IEEE Silicon Nanoelectronics Workshop June 2012 Honolulu

Charge sensing of a Si triple quantum dot system using single electron transistors R. Mizokuchi, T. Kodera, K. Horibe, Y. Kawano, and S. Oda IEEE Silicon Nanoelectronics Workshop June 2012 Honolulu

Fabrication and characterization of Si/SiGe quantum dots with capping gate T. Kodera, Y. Fukuoka, K. Takeda, T. Obata, K. Yoshida, K. Sawano, and S. Oda IEEE Silicon Nanoelectronics Workshop June 2012 Honolulu

NeoSilicon based nanoelectromechanical information devices S. Oda MPA 2012 ? 6th Int. Meeting on Developments in Materials, Processes and Applications of Emerging Technologies July 2012 Alvor-Algarve (Portugal)

Silicon quantum dots devices S. Oda IMRC 2012 August 2012 Cancun

Dual Function of Charge Sensor: Charge Sensing and Gating Kambara Tomohiro, Kodera Tetsuo, Oda Shunri Solid State Devices and Materials Conference September 2012 Kyoto

Fabrication and Characterization of p-Channel Si Double-Quantum-Dot Structures Yamada Ko, Kodera Tetsuo, Kambara Tomohira, Kawano Yukio, Oda Shunri Solid State Devices and Materials Conference September 2012 Kyoto

Scaling of Channel Length for Highly Conductive Silicon Nanocrystal Films Susoma Jannatul Ferdous, Nakamine Yoshifumi, Koichi Usami, Tetsuo Kodera, Yukio Kawano, Shunri Oda Solid State Devices and Materials Conference September 2012 Kyoto


   Domestic Conferences


架橋多層グラフェンナノリボンにおける電荷数の温度依存性 新留 彩,福田裕樹,小田俊理,内田 建 第59回応用物理学関係連合講演会, March 2012 東京都

クロージングトーク 小田俊理 第59回応用物理学関係連合講演会, March 2012 東京都

Capping gate 構造を有するSi/SiGe 量子ドットの作製と評価 福岡佑二,小寺哲夫,武田健太,小幡利顕,吉田勝治,澤野憲太郎,内田 建,白木靖寛,樽茶清吾,小田俊理 第59回応用物理学関係連合講演会, March 2012 東京都

MOS 界面における変形ポテンシャルの上昇 大橋輝之,高橋綱己,内田 建,小田俊理 第59回応用物理学関係連合講演会, March 2012 東京都

ナノ薄膜SOI における不純物のイオン化エネルギー増大 黒澤裕也,角谷直哉,高橋綱己,大橋輝之小田俊理,内田 建 第59回応用物理学関係連合講演会, March 2012 東京都

AC コンダクタンス法及びパルスIV 法による自己発熱抑制時のSOI MOSFETドレイン電流評価 別府伸耕,小田俊理,内田 建 第59回応用物理学関係連合講演会, March 2012 東京都

デバイスシミュレータを用いたナノスケールBulk/SOI FinFET の熱設計 高橋綱己,別府伸耕,陳 君?,小田俊理,内田 建 第59回応用物理学関係連合講演会, March 2012 東京都

シリコン2重結合量子ドットの少数電子領域観測へ向けた構造最適化の検討 蒲原知宏,小寺哲夫,Thierry Ferrus,Alessandro Rossi,堀部浩介,荒川泰彦,David Williams,小田俊理 第59回応用物理学関係連合講演会, March 2012 東京都

無水フッ酸エッチングによるシリコンナノ結晶の自然酸化膜の除去

中峯嘉文,小寺哲夫,河野行雄,内田 建,小田俊理

第59回応用物理学関係連合講演会, March 2012 東京都

単層ゲートによるシリコン2 重量子ドット形成のシミュレーション Muhammad Amin Sulthoni1,○小寺哲夫1,2,3,河野行雄1,小田俊理 第59回応用物理学関係連合講演会, March 2012 東京都

ナノギャップ電極とナノ結晶シリコン量子ドットの電子輸送特性 澤田知孝,小寺哲夫,河野行雄,波多野睦子,小田俊理 第59回応用物理学関係連合講演会, March 2012 東京都

GaAs/AlGaAsを用いた周波数可変テラヘルツ波検出器のゲート電圧による応答制御 鈴木大地,小田俊理,河野行雄 第73回応用物理学会学術講演会 September 2012 松山市

Low Growth Temperature of Ge NWs for Electron Device Application Marolop Simanullang,野口智弘,Akhmadi Surawijaya,宇佐美浩一,小寺哲夫,河野行雄,小田俊理 第73回応用物理学会学術講演会 September 2012 松山市

VHFプラズマにより作製したナノ結晶シリコンのフッ硝酸による粒径縮小

近藤信啓,染野 健,中峯嘉文,宇佐美浩一,小寺哲夫,河野行雄,小田俊理 第73回応用物理学会学術講演会 September 2012 松山市

グラフェンナノリボン抵抗変化型メモリの実現 新留 彩,福田祐樹,小田俊理,内田 建 第73回応用物理学会学術講演会 September 2012 松山市

ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明 大橋輝之,高橋綱己,小寺哲夫,小田俊理,内田 建 第73回応用物理学会学術講演会 September 2012 松山市

デバイスシミュレータを用いたナノスケールBulk/SOI FinFET熱等価回路モデルの導出 高橋綱己,別府伸耕,小田俊理,内田 建 第73回応用物理学会学術講演会 September 2012 松山市

ACコンダクタンス法を用いた実験手法に対する検証 別府伸耕,小田俊理,内田 建 第73回応用物理学会学術講演会 September 2012 松山市

Si ナノワイヤ FETの電気特性に対するアニーリング処理の影響 野口智弘,小寺哲夫,Marolop Simanullang,Surawijaya Akhmadi,宇佐美浩一,小田俊理 第73回応用物理学会学術講演会 September 2012 松山市

ホール輸送によるp型量子ドットの作製と特性評価 山田 宏, 小寺哲夫,蒲原知宏,河野行雄,小田俊理 第73回応用物理学会学術講演会 September 2012 松山市

正三角形の頂点に配置したシリコン3重量子ドットの作製と特性評価 小寺哲夫,溝口来成,林 久志堀部浩介,蒲原知宏,荒川泰彦,小田俊理 第73回応用物理学会学術講演会 September 2012 松山市

Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High Performance Electron Device Jannatul susoma,中峯嘉文,近藤信啓,小寺哲夫,宇佐美浩一,河野行雄,小田俊理 第73回応用物理学会学術講演会 September 2012 松山市

単電子トランジスタによるSi三重量子ドットのチャージセンシング 溝口来成, 小寺哲夫,堀部浩介,河野行雄,小田俊理 第73回応用物理学会学術講演会 September 2012 松山市

バックゲートとソース/ドレイン電圧印加による各量子ドットの電気化学ポテンシャル制御 蒲原知宏,小寺哲夫,小田俊理 第73回応用物理学会学術講演会 September 2012 松山市

MOS構造gateを有するSi/SiGe量子ドットデバイスの作製 神岡 純,小寺哲夫,武田健太,小幡利顕,吉田勝治,樽茶清悟,小田俊理 第73回応用物理学会学術講演会 September 2012 松山市


2011

   Journal Papers


Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System Y. Nakamine, N. Inaba, T. Kodera, K. Uchida, R. N. Pereira, A. R. Stegner, M. S. Brandt, M.? Stutzmann, and S. Oda Japanese Journal of Applied Physics, February 2011 vol. 50, pp.025002

Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field T. Takahashi, T. Kodera, S. Oda and K. Uchida Journal of Applied Physics, February 2011 vol.109, pp.034505

Growth of Ge-Si nanowires heterostructure via chemical vapour deposition C. B. Li, K. Usami, H. Mizuta, and S. Oda Thin Solid Films, April 2011 vol. 519 4174-4176

Simulation study of charge modulation in coupled quantum dots in silicon T. Kambara, T. Kodera, T. Takahashi, G. Yamahata, K. Uchida, S. Oda Japanese Journal of Applied Physics, April 2011 vol .50 04DJ05 (4 pages)

Demonstration of spin valve effects in Silicon nanowires Jean L. Tarun, Shaoyun Huang, Y. Fukuma, H. Idzuchi, Y. Otani, N. Fukata, K. Ishibashi and S. Oda Journal of Applied Physics, April 2011 vol .109 07C508

Detection of variable tunneling rates in silicon quantum dots A. Rossi, T. Ferrus,W. Lin, T. Kodera, D. A. Williams, and S. Oda Applied Physics Letters, April 2011 98 133506 (3 pages)

Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade Berrin Pinar Algul, Tetsuo Kodera, Shunri Oda, and Ken Uchida Japanese Journal of Applied Physics, April 2011 50 04DN01 (4 pages)

Numerical Simulation Study of Electrostatically Defined Silicon Double Quantum Dot Device Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, and Shunri Oda Journal of Applied Physics, August 2011 110 054511 (4 pages)

Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1×10^18 cm3 and silicon-on-insulator thickness of less than 10 nm Naotoshi Kadotani, Tsunaki Takahashi, Teruyuki Ohashi, Shunri Oda, and Ken Uchida Journal of Applied Physics, August 2011 110 034502 (7 pages)

Tip-enhanced Raman mapping of a single Ge nanowire Y. Ogawa, Y. Yuasa, F. Minami, and S. Oda Applied Physics Letters, August 2011 99 053112 (3 pages)

Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors Naotoshi Kadotani, Teruyuki Ohashi, Tsunaki Takahashi, Shunri Oda, and Ken Uchida Japanese Journal of Applied Physics, September 2011 50 094101 (4 pages)

Growth of Narrow and Straight Germanium Nanowires by Vapour-Liquid-Solid Chemical-Vapour-Deposition Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, and Shunri Oda Japanese Journal of Applied Physics, October 2011 50 (10) 105002 (6 pages)

Germanium Nanowires with 3-nm-Diameter Prepared by Low Temperature Vapour-Liquid-Solid Chemical Vapour Deposition Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, and Shunri Oda Journal of Nanoscience and Nanotechnology, September 2011 11, 8163-8168 (6 pages)

Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching
Yoshifumi Nakamine, Tetsuo Kodera, Ken Uchida, and Shunri Oda Japanese Journal of Applied Physics, November 2011 50, 115002 (4 pages)


   International Conferences


Laser Annealing of Silicon Nanocrystals Thin-films Prepared by VHF Plasma Deposition System Y. Nakamine, Michiel van der Zwan, Johan van der Cingel, Tetsuo Kodera, Ken Uchida, Ryoichi Ishihara and Shunri Oda Materials Research Society April 2011 San Francisco

Constructing Templates for One-dimensional Nanostructure Uusing DNA Origami Ian Robertson, Testuo Kodera, Yasuko Yanagida, Ken Uchida and Shunri Oda Materials Research Society April 2011 San Francisco

Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application Yoshifumi Nakamine, Ken Someno, Hiroki Nikaido, Masahiro Kouge, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, and Shunri Oda 7th International Nanotechnology Conference on Communication and Cooperation (INC7) May 2011 Albany

Synthesis of small-diameter Ge NW at low temperature for electron device application Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda 7th International Nanotechnology Conference on Communication and Cooperation (INC7) May 2011 Albany

Observation of Pauli-Spin Blockade and Single-Electron Regime in Silicon Coupled Quantum Dots
Tetsuo Kodera, Kousuke Horibe, Tomohiro Kambara, Gento Yamahata, Ken Uchida, Yasuhiko Arakawa, Shunri Oda
7th International Nanotechnology Conference on Communication and Cooperation (INC7) May 2011 Albany

Magnetoresistance of Cobalt-Contacted Silicon Nanowire Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, YoshiChika Otani, Naoki Fukata, Koji Ishibashi, and Shunri Oda IEEE Silicon Nanoelectronics Workshop June 2011 Kyoto

Charge Detection in Silicon Quantum Dots Coupled in Parallel T. Kodera, K. Horibe, W. Lin, T. Kambara, T. Ferrus, A. Rossi, K. Uchida, D. A. Williams, Y. Arakawa, and S. Oda IEEE Silicon Nanoelectronics Workshop June 2011 Kyoto

Electrical Property of Nano-Crystalline Silicon Thin-Films Transistors Prepared by Very High Frequency Plasma Deposition System Yoshifumi Nakamine, Mohammad R. T. Mofrad, Michiel van der Zwan, Johan van der Cingel, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Ryoichi Ishihara, and Shunri Oda IEEE Silicon Nanoelectronics Workshop June 2011 Kyoto

Simulation Study of Electrostatically Defined Silicon Double Quantum Dot Device Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, and Shunri Oda IEEE Silicon Nanoelectronics Workshop June 2011 Kyoto

Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact Y. Fukuoka, T. Kodera, T. Otsuka, K. Takeda, T. Obata, K. Yoshida, K. Sawano, K Uchida, Y. Shiraki, S. Tarucha, and S. Oda IEEE Silicon Nanoelectronics Workshop June 2011 Kyoto

An apparent metal-insulator transition in a phosphorous doped silicon single electron transistor T. Ferrus, A. Rossi, W. Lin, D. A. Williams, T. Kodera, and S. Oda IEEE Silicon Nanoelectronics Workshop June 2011 Kyoto

NeoSilicon Based Nano-electromechanical Devices S. Oda 18th International Conference on Mixed Design of Integrated Circuits and Systems June 2011 Gliwice, Poland invited

Triangularly-positioned silicon triple quantum dots Tetsuo Kodera, Kousuke Horibe, H. Hayashi, Tomohiro Kambara, Ken Uchida, Yasuhiko Arakawa, Shunri Oda the 15th International Conference on Modulated Semiconductor Structures (MSS 15), Tu-P-90, July 2011, Florida, USA

Observation of single-electron regime in a silicon quantum dot by a single-electron transistor Kousuke Horibe, Tetsuo Kodera, Tomohiro Kambara, Ken Uchida, Shunri Oda the 19th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS 19) Tu-P-43 July 2011 Florida USA

Photoluminescence of Nanocrystalline ICANS-24Silicon Quantum Dots Prepared by VHF Plasma Cell Ken Someno, Kouichi Usami, Tetsuo Kodera, Mutsuko Hatano, Shunri Oda 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24) August 2011 Nara

Electrical Property of Nano-Crystalline Silicon Thin-Films Prepared by Very High Frequency Plasma Deposition System Yoshifumi Nakamine, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, and Shunri Oda 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24) August 2011 Nara

Spin Effects and Charge Sensing in Silicon Single Electron T. Kodera BIT’s 1st Annual World Congress of Nano-S&T, October 2011 Dalian China Invited

A Multi-purpose Electrostatically Defined Silicon Quantum Dot Structure Muhammad Amin Sulthoni, Tetsuo Kodera, Yukio Kawano, and Shunri Oda 2011 International Conference on Solid State Devices and Materials (SSDM 2011), P-9-7 September 2011 Nagoya Japan

Observation of few-electron regime and suppression of inter-dot tunneling in silicon quantum dots T. Kodera, K. Horibe, T. Kambara, G. Yamahata, K. Uchida, Y. Arakawa, S. Oda the International Conference on Quantum Information Processing and Communication 2011 (QIPC 2011), CS-8, September 2011 Zurich Switzerland

Charge sensing in silicon quantum dots for quantum computation A. Rossi, T. Ferrus, T. Kodera, S. Oda, D. A. Williams the International Conference on Quantum Information Processing and Communication 2011 (QIPC 2011, September 2011 Zurich Switzerland

GERMANIUM NANOWIRES WITH 3-NM-DIAMETER PREPARED BY LOW TEMPERATURE (260OC) VAPOUR-LIQUID-SOLID CHEMICAL VAPOUR DEPOSITION M. Simanullang, K. Usami, T. Kodera, K. Uchida, S. Oda EuroCVD 18, September 2011 Kinsale, Irelamd

Influence of Backgate Voltage on Spin Accumulation in a Silicon Nanowire Spin Valve J. Tarun, S. Huang, Y. Fukuma, H. Idzuchi, Y. Otani, T. Kodera, N. Fukata, K. Ishibashi and S. Oda MNC 2011, October 2011 Kyoto

Microscopic Study of the Germanium Nanowires grown at Low-temperatures by Au-catalysed Chemical Vapour Deposition M. Simanullang, K. Usami, T. Kodera, K. Uchida and S. Oda MNC 2011, October 2011 Kyoto

NeoSilicon Based Nano-electromechanical Information Devices S. Oda G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
, October 2011 Tokyo invited

Utilizing 2D figures of DNA polymer for self-assembly applications on silicon platform Ian C. Robertson, Tetsuo Kodera, Yasuko Yanagida, Ken Uchida, and Shunri Oda G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists

Transport Simulation of an Electrostatically Defined Silicon Double Quantum Dot Device Muhammad Amin Sulthoni, Tetsuo Kodera, Yukio Kawano, and Shunri Oda G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
, October 2011 Tokyo invited

Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application Yoshifumi Nakamine, Ken Someno, Hiroki Nikaido, Masahiro Kouge, Tetsuo Kodera, Yukio Kawano, Ken Uchida, Mutsuko Hatano, and Shunri Oda G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
, October 2011 Tokyo invited

Low-Temperature Magnetoresistance Studies of Silicon Nanowires with Permalloy Leads Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, Yoshichika Otani, Tetsuo Kodera, Naoki Fukata, Koji Ishibashi, and Shunri Oda G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
, October 2011 Tokyo invited

Charge detection techniques in Si double quantum dots Tomohiro Kambara, Tetsuo Kodera, Thierry Ferrus, Alessandro Rossi, Kosuke Horibe, Yasuhiko Arakawa, David Williams, and Shunri Oda G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
, October 2011 Tokyo invited

Synthesis of small-diameter Ge NW at low temperature for electron device application Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
, October 2011 Tokyo invited

Photoluminescence and Raman studies of Ge nanowires grown on Si (100) and (111) substrates Ayse Seyhan, Yoshi Ogawa, Maralop Simanullang and Shunri Oda G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
, October 2011 Tokyo invited

Photoluminescence of Nanocrystalline Silicon Quantum Dots prepared by VHF Plasma Ken Someno, Kouichi Usami, Tetsuo Kodera, Yukio Kawano, Mutsuko Hatano, and Shunri Oda G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
, October 2011 Tokyo invited

Electron transport in a single silicon nanocrystal between nanogap electrodes Tomotaka Sawada, Testuo Kodera, Yuki Kawano, Mustuko Hatano, and Shunri Oda G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
, October 2011 Tokyo invited

Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact Y. Fukuoka, T. Kodera, K. Takeda, T. Obata, K. Yoshida, T. Otsuka, K. Sawano, K Uchida, Y. Shiraki, S. Tarucha, and S. Oda G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
, October 2011 Tokyo invited

Fabrication of few-electron silicon quantum dot devices based on an SOI substrate with a top gate cintact K. Horibe, T. Kodera, T. Kambara, K. Uchida, S. Oda G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
, October 2011 Tokyo invited

Development of silicon quantum dot devices toward spin quantum bits T. Kodera, K. Horibe, W. Lin, T. Kambara, T. Ferrus, A. Rossi, K. Uchida, D. A. Williams, Y. Arakawa, and S. Oda G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
, October 2011 Tokyo invited

Direct Observation of Subband Structures in (110) Si pMOSFETs under High Magnetic Field and Its Impact on Hole Transport Tsunaki Takahashi, Tetsuo Kodera, Shunri Oda, and Ken Uchida G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
, October 2011 Tokyo invited

Mechanisms of electron mobility enhancement in junctionless SOI MOSFETs Teruyuki Ohashi, Naotoshi Kadotani, Tsunaki Takahashi, Shunri Oda and Ken Uchida G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
, October 2011 Tokyo invited


   Domestic Conferences


高不純物濃度のETSOI(Extremely-Thin SOI) 拡散層における移動度とSOI 膜厚および不純物濃度の関係 角谷直哉,高橋綱己,大橋輝之,小寺哲夫,小田俊理,内田建 第58回応用物理学関係連合講演会, March 2011 厚木市

チャージセンサによるシリコン量子ドットの少数電子状態観測 堀部浩介,小寺哲夫,蒲原知宏,内田建,小田俊理 第58回応用物理学関係連合講演会, March 2011 厚木市

シリコン単電子トランジスタを電荷センサとした電子数変化の検出 林文城,小寺哲夫,Thierry Ferrus,Alessandro Rossi,David Williams,内田建,小田俊理 第58回応用物理学関係連合講演会, March 2011 厚木市

電子スピン量子ビットに向けた少数電子シリコン量子ドットの実現 小寺哲夫,堀部浩介,蒲原知宏,山端元音,内田 建,荒川泰彦,小田俊理 第58回応用物理学関係連合講演会, March 2011 厚木市 招待講演

Si/SiGe 量子ドット作製に向けたPd トップゲート動作点の低電圧化 福岡佑二,小寺哲夫,大塚朋廣,武田健太,小幡利顕,吉田勝治,澤野憲太郎,内田建,白木靖寛,樽茶清悟,小田俊理 第58回応用物理学関係連合講演会, March 2011 厚木市

VHF プラズマセル法によるナノ結晶シリコンのフォトルミネッセンス特性 染野健,宇佐美浩一,小寺哲夫,波多野睦子,小田俊理 第58回応用物理学関係連合講演会, March 2011 厚木市

VHF プラズマにより作製されたシリコンナノ結晶のレーザアニーリング 中峯嘉文,Michiel Van Der Zwan,Johan Van Der Cingel,小寺哲夫,内田建,石原良一,小田俊理 第58回応用物理学関係連合講演会, March 2011 厚木市

トップダウンとボトムアッププロセスを融合したシリコン量子構造デバイス 小田俊理 第58回応用物理学関係連合講演会, March 2011 厚木市 招待講演

CNTFETsにおけるトンネル・リーク電流の抑制に関する研究

ベッリン ピナー アルグル,小寺哲夫,小田俊理,内田 建

第72回応用物理学会学術講演会 August 2011 山形市

VHF プラズマにより作製したナノ結晶シリコンの光学的特性 染野 健,宇佐美浩一,小寺哲夫,河野行雄,波多野睦子,小田俊理 第72回応用物理学会学術講演会 August 2011 山形市

シリコンナノワイヤ磁気抵抗効果における界面の影響 Jean Tarun,Shaoyun Huang,福間康裕,井土 宏,大谷義近,深田直樹,石橋幸治,小田俊理 第72回応用物理学会学術講演会 August 2011 山形市

ナノギャップ電極とナノ結晶シリコン量子ドットの集積配列 澤田知孝,小寺哲夫,河野行雄,波多野睦子,小田俊理 第72回応用物理学会学術講演会 August 2011 山形市

シリコン量子ドットと単電子トランジスタ電荷センサーの静電結合評価 堀部浩介,小寺哲夫,蒲原知宏,内田 建,小田俊理 第72回応用物理学会学術講演会 August 2011 山形市

Si/SiGe量子ドット構造のシミュレーションと作製

福岡佑二,小寺哲夫,大塚朋廣,武田健太,小幡利顕,吉田勝治,澤野憲太郎,内田 建,白木靖寛,樽茶清悟,小田俊理 第72回応用物理学会学術講演会 August 2011 山形市

低温・強磁場環境を利用した極薄膜SOI中の変形ポテンシャルの評価 大橋輝之,高橋綱己,小寺哲夫,小田俊理,内田 建 第72回応用物理学会学術講演会 August 2011 山形市

並列結合したシリコン量子ドットにおける電荷検出実験 小寺哲夫,堀部浩介,林 文城,蒲原知宏,Thierry Ferrus,Alessandro Rossi,内田 建,David Williams,荒川泰彦,小田俊理 第72回応用物理学会学術講演会 August 2011 山形市

レーザアニーリングによるシリコンナノ結晶薄膜の電気特性への影響 中峯嘉文,Mohammad Mofrad,Michiel Van Der Zwan,Johan Van Der Cingel,小寺哲夫,内田 建,石原良一,小田俊理 第72回応用物理学会学術講演会 August 2011 山形市

シリコン量子ドットにおけるスピン効果と磁場依存性 小寺哲夫,堀部浩介,蒲原知宏,山端元音,内田建,荒川泰彦,小田俊理 日本物理学会2011年秋季大会 、23pTM-12、September 2011 富山市


   Others

著書

メモリデバイス 小田俊理 電子情報通信学会「知識ベース」(オーム社)

Si量子ドットを用いた単電子トランジスタの研究 小田俊理 量子ドットエレクトロニクスの最前線(エヌ・ティー・エス)

トップゲートとサイドゲートによるシリコン結合量子ドットの静電結合制御 小寺哲夫,小田俊理 量子ドットエレクトロニクスの最前線 (エヌ・ティー・エス)


2010

   Journal Papers


Size effect on hopping conduction in silicon nanocrystals X. Zhou, M. A. Rafiq, H. Mizuta, and S. Oda AIP Conf. Proc January 2010 199 321-322

Current fluctuations in three-dimensionally stacked Si nanorystals thin films
Xin Zhou, Ken Uchida, and Shunri Oda
Applied Physics Letters March 2010 96 092112 (3 pages)

Single Hole Charging at Room Temperature of Ge Quantum Dots Grown on Si(001) by Molecular Beam Epitaxy R. Singha, S. Das, Achintya Dhar, Samir K. Lahiri, Samit K. Ray, Akhmadi Surawijaya, and Shunri Oda Nanoscience and
Nanotechnology Letters 1 (2) 2010 in press

Design of New Logic Architectures utilizing Optimized Suspended-Gate Single-Electron Transistors B. Pruvost,K. Uchida, H. Mizuta,S. Oda IEEE Transactions on Nanotechnology July 2010 vol. 9 (4) pp.504 ? 512

Suspended quantum dot fabrication on a heavily-doped silicon nanowire by suppressing unintentional quantum dot formation J. Ogi, M. A. Ghiass, T. Kodera, Y. Tsuchiya, K. Uchida, S. Oda, and H. Mizuta Japanese Journal of Applied Physics April 2010 49 pp. 044001 (5 pages)

Experimental observation of enhanced electron-phonon interaction in suspended Si double quantum dots J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda,
and H. Mizuta
Japanese Journal of Applied Physics April 2010 49 pp. 045203 (5 pages)

Scaling Analysis of Nanoelectromechanical Memory Devices T. Nagami, Y. Tsuchiya, K. Uchida, H. Mizuta, and S. Oda Japanese Journal of Applied Physics April 2010 49 pp. 044304 (5 pages)

Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots T. Ishikawa, H. Nikaido, K. Usami, K. Uchida, and S. Oda Japanese Journal of Applied Physics December 2010 49 pp.125002 (4 pages)

シリコンナノ結晶のCVD成長と新機能 小田俊理 日本結晶成長学会誌 2010 Vol.37 (4)


   International Conferences


Inelastic single-electron tunneling assisted by confined phonons observed for suspended silicon double quantum dots J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda, and H. Mizuta IOP Quantum Dot Meeting January 2010 Cambridge

Hybrid Silicon Nanoelectromechanical Devices: Physics and Applications H. Mizuta, Y. Tsuchiya and S. Oda UK-Japan Workshop on Novel Phenomena and Technologies in Semiconductor Nanostructures January 2010 Tokyo

VHF Plasma process for size-controlled Si nanodot fabrication S. Oda 2010 International Symposium on Atom -scale Silicon Hybrid Nanotechnologies for
'More-than-Moore' & 'Beyond CMOS' Era March 2010 Southampton invited

Pauli spin blockade in a lithographically-defined silicon double quantum dot G. Yamahata, T. Kambara, K. Uchida, C. M. Marcus, S. Oda ,T. Kodera International Symposium on Quantum Nanostructures and Spin-related Phenomena March 2010 Tokyo

Magnetic field dependence of resonant tunneling between an InAs quantum dot and an InGaAs quantum dot T. Kodera, K. Ono, N. Kumagai, T. Nakaoka, S. Tarucha, S. Oda, Y. Arakawa International Symposium on Quantum Nanostructures and Spin-related Phenomena March 2010 Tokyo

Artificial membrane constructed by one-dimensional nanostructure using DNA origami Ian C. Robertson, K. Uchida, and S. Oda Materials Research Society April 2010 San Francisco

Nanoscale Selective Silicon Nanowires Surface Functionalization for Sensing Applications S. Armini, M. Carli, J. Snauwaert, V. Cherman, I. De Wolf, V. Simons, A. Maestre Caro, J. Moonens, P. Neutens, K. Arstila, J. Ogi, S. Oda, Y. Tsuchiya and H. Mizuta Materials Research Society April 2010 San Francisco

Resonant tunnelling between a self-assembled InAs quantum dot and an electrically-defined InGaAs quantum dot T. Kodera, K. Ono, N. Kumagai, T. Nakaoka, S. Tarucha, S. Oda, and Y. Arakawa the 6th International Conference on Semiconductor Quantum Dots (QD2010), P. 58, Nottingham UK, (April 2010)

Spin-related tunneling in lithographically-defined silicon quantum dots
T. Kodera, G. Yamahata, T. Kambara, K. Horibe, K. Uchida, C. M. Marcus and S. Oda
IEEE Silicon Nanoelectronics Workshop June 2010 Honolulu

Single-electron energy dissipation processes mediated by slab mode phonons observed for suspended silicon double quantum dots
J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda and H. Mizuta
IEEE Silicon Nanoelectronics Workshop June 2010 Honolulu

Artificial Membrane Constructed by one-dimensional Nanostructure using DNA Origami
Ian C. Robertson, Ken Uchida and Shunri Oda 7th International Conference on NN10 July 2010 Halkidiki, Greece (Best Poster Award)

Realization of lithographically-defined silicon quantum dots without unintentional localized potentials
Tetsuo Kodera, Gento Yamahata, Tomohiro Kambara, Kousuke Horibe, Thierry Ferrus, David Williams, Yasuhiko Arakawa, and Shunri Oda 30th International Conference on Physics of Semiconductors (ICPS-30), TuB 2-5, Seoul, Korea, (July 2010)

Magnetic field dependence of a leakage current in Pauli-spin blockade regime of silicon double quantum dots
T. Kodera, G. Yamahata, T. Kambara, K. Uchida, C. M. Marcus, and S. Oda School and conference on Spin-based quantum information processing, A48, Konstanz, Germany, (August 2010)

Silicon Quantum Dot Devices S. Oda Sixteenth School on Condensed Matter Physics August 2010 Varna invited

Simulation study of charge modulation in coupled quantum dots in silicon Tomohiro Kambara, Tetsuo Kodera, Gento Yamahata, Ken Uchida, Shunri Oda Solid State Devices and Materials Conference, Extended Abstracts September 2010 Tokyo

Preparation of SOI-based Double Quantum Dots Structure Defined by Geometry and Electrostatically Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, and Shunri Oda Solid State Devices and Materials Conference, Extended Abstracts September 2010 Tokyo

Study on Device Parameters of Carbon Nanotube FETs to Realize Steep Subthreshold Slope of less than 60 mV/decade Berrin Pinar Algul, Tetsuo Kodera, Shunri Oda, and Ken Uchida Solid State Devices and Materials Conference, Extended Abstracts September 2010 Tokyo

Scaled silicon NEM hybrid devices S. Oda Nano-Electro-Mechanical Devices for Integrated Sensing and Switching; Satellite workshop to ESSDERC/ESSCIRC 2010, September 2010 Seville invited

Silicon Quantum Dots for Spin-Based Quantum Information Processing Tetsuo Kodera, Tomohiro Kambara, Kousuke Horibe, Gento Yamahata, Ken Uchida, and Shunri Oda 2nd Japanese-Russian young scientists conference on nano-materials and nano-technology, Tokyo, Japan, (September 2010)

NeoSilicon based nanoelectromechanical information devices S. Oda IEEE EDS Minicolloquim on Physics of Electron Devices in Engineering Education, October 2010 Pokhara invited

Spin valve effects in Silicon nanowires

Jean L. Tarun, Shaoyun Huang, Y. Fukuma, H. Idzuchi, Y. Otani, Naoki Fukata, Koji Ishibashi and Shunri Oda

55th Magnetism and Magnetic Materials Conference (MMM), November 2010 Atlanta

Distinct Spin Valve Effects in Silicon Nanowires Measured by Non-local Electrode Configuration Jean L. Tarun, Shaoyun Huang, Y. Fukuma, H. Idzuchi, Y. Otani, Naoki Fukata, Koji Ishibashi and Shunri Oda International Microprocesses and Nanotechnology Conference (MNC 2010), November 2010 Kitakyushu

Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10 nm and High Doping Concentration of Greater Than 1×1018cm-3 N. Kadotani, T. Takahashi, K. Chen, T. Kodera, S. Oda and K. Uchida IEEE International Electron Devices Meeting (IEDM), December 2010 San Francisco


   Domestic Conferences


シリコン宙づり構造内の結合二重量子ドットの電子フォノン相互作用 小木 純,Thierry Ferrus,小寺哲夫,土屋良重,内田 建,David Williams,水田 博,小田俊理 第57回応用物理学関係連合講演会 March 2010 平塚市

ナノ結晶シリコン量子ドットデバイス 小田俊理 第57回応用物理学関係連合講演会 March 2010 平塚市

Utilizing electoosmotic affects in aligning DNA functionalized nanowires after being anchored onto a pattern surface イアン ロバートソン,内田 建,小田俊理 第57回応用物理学関係連合講演会 March 2010 平塚市

エレクトロメカニカルシミュレーションによるNEMSメモリのスケーリング特性 永見 佑,土屋良重,水田 博,内田 建,小田俊理 第57回応用物理学関係連合講演会 March 2010 平塚市

ダブルトップゲートを有するシリコン量子ドットのシミュレーションと作製 蒲原知宏,小寺哲夫,山端元音,内田 建,小田俊理 第57回応用物理学関係連合講演会 March 2010 平塚市

Simulation of silicon double quantum dots device fabricated by combining lithographical and electrostatical approaches Muhammad Amin Sulthoni,小寺哲夫,内田 建,小田俊理
第57回応用物理学関係連合講演会 March 2010 平塚市

VHFプラズマパワーの変化によるシリコンナノ結晶の縮小化 中峯嘉文,小寺哲夫,内田 建,小田俊理 第57回応用物理学関係連合講演会 March 2010 平塚市

強磁場印加による(110) pMOSFETサブバンド構造の直接的観測 高橋綱己,山端元音,小木 純,小寺哲夫,小田俊理,内田建
第57回応用物理学関係連合講演会 March 2010 平塚市

Silicon Nanowire-Based Lateral Spin Valve Device Jean Tarun,Shaoyun Huang,福間康裕,井土 宏,大谷義近,深田直樹,石橋幸治,小田俊理
第71回応用物理学会学術講演会, September 2010 長崎市

Small-diameter Ge nanowires grown at 280°C by VLS−CVD M. Simanullang, 宇佐美浩一,小寺哲夫,内田建,小田俊理
第71回応用物理学会学術講演会, September 2010 長崎市

pn接合の無い極薄膜SOIトランジスタの作製と電気特性評価 角谷直哉,高橋綱己,小寺哲夫,小田俊理,内田建
第71回応用物理学会学術講演会, September 2010 長崎市

InPに格子整合したIn0.53Ga0.47Asバンド構造の一軸歪み依存性 引田和宏,小寺哲夫,小田俊理内田 建
第71回応用物理学会学術講演会, September 2010 長崎市

Pr系酸化膜を用いたヘテロ積層構造トンネル膜の電気特性シミュレーションと作製及び評価 小林大助,栗原智之,小寺哲夫,内田建,野平博司,小田俊理
第71回応用物理学会学術講演会, September 2010 長崎市

サイドゲートとトップゲートを用いたシリコン二重結合量子ドット形成シミュレーション 蒲原知宏,小寺哲夫,山端元音,内田建,小田俊理
第71回応用物理学会学術講演会, September 2010 長崎市

Si/SiGe系2DEGのPdショットゲート制御による結合量子ドットの作製 福岡佑二,小寺哲夫,大塚朋廣,武田健太,小幡利顕,吉田勝治,澤野憲太郎,内田建,白木靖寛,樽茶清悟,小田俊理
第71回応用物理学会学術講演会, September 2010 長崎市

シリコン結合量子ドットにおけるスピン効果の観測 小寺哲夫,山端元音,蒲原知宏,内田建,小田俊理
第71回応用物理学会学術講演会, September 2010 長崎市 (応用物理学会講演奨励賞受賞)

凹凸基板を用いたディップコーティング法によるナノ結晶シリコンの集積化技術 高下雅央,石川哲也,宇佐美浩一,小寺哲夫,内田建,小田俊理
第71回応用物理学会学術講演会, September 2010 長崎市

CNTトランジスタにおけるバンド間トンネルを利用したS係数60 mV/dec未満を実現するデバイスパラメータの研究 ベッリン ピナー アルグル,小寺哲夫,小田俊理,内田建
第71回応用物理学会学術講演会, September 2010 長崎市

PdショットキーゲートによるSi/SiGe量子ドットの作製とその評価 武田健太,小幡利顕,福岡佑二,大塚朋廣,小寺哲夫,吉田勝治,澤野憲太郎,小田俊理,白木靖寛,樽茶清悟
日本物理学会秋季大会 September 2010 大阪

Lateral dot fabrication by using a MOS electric gate on SiGe hetero structure 小幡利顕,申潤錫,ロランドブルナ,武田健太,福岡佑二,大塚朋廣,小寺哲夫,吉田勝治,澤野憲太郎,小田俊理,白木靖寛,樽茶清悟
日本物理学会秋季大会 September 2010 大阪

少数電子シリコン量子ドットの作製とスピン現象の観測 小寺哲夫,堀部浩介, 蒲原知宏, 山端元音, T. Ferrus, D. Williams, 荒川泰彦, 小田俊理 公開シンポジウム 「ナノ量子情報エレクトロニクスの進展」 December 2010 東京大学, 本郷

電子スピン量子ビットに向けたシリコン量子ドットの作製と評価 小寺哲夫
イノベーション研究推進体「量子情報処理デバイス」研究会 December 2010 東京工業大学、目黒


   Others

著書

Silicon Nanocrystal Flash Memory S. Oda and S-Y Huang
Silicon Nanocrystals: Fundamentals, Synthesis and Applications, Edited by L. Pavesi and R Turan, Wiley VCH, Weinheim 395-444

プラズマ技術によるナノシリコンドットの作製 小田俊理 ナノシリコンの最新技術と応用展開(越田信義監修、シーエムシー出版 .205-213

Photovoltaics and Optoelectronics from Nanoparticles M. Winterer, W. Gladfelter, D. Gamelin, S. Oda Materials Research Society Symposium Proceedings, ISBN 978-1-60511-237-4 1260 159 pages


2009

   Journal Papers


Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate C. B. Li, K. Usami, G. Yamahata, Y. Tsuchiya, H. Mizuta, S. Oda Applied Physics Express May 2009 2 (1) 15004

Design optimization of NEMS switches for suspended-gate single-electron transistor applications B. Pruvost,K. Uchida, H. Mizuta,S. Oda IEEE Transactions on Nanotechnology September 2009 8 (2) 174-184

Spontaneous Emission Control of Silicon Nanocrystals by Silicon Three-Dimensional Photonic Crystal Structure Fabricated by Self-Aligned Two-Directional Electrochemical Etching Method D. Hippo, Y. Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshida and S. Oda Materials Chemistry and Physics July 2009 116 107-111

Electron transport through silicon serial triple quantum dots G. Yamahata, Y. Tsuchiya, H. Mizuta, K. Uchida, S. Oda Solid State Electronics in press April 2009 53 779-785

Single Hole Charging at Room Temperature of Ge Quantum Dots Grown on Si(001) by Molecular Beam Epitaxy R. Singha, S. Das, Achintya Dhar, Samir K. Lahiri, Samit K. Ray, Akhmadi Surawijaya, and Shunri Oda Nanoscience and Nanotechnology Letters in press

Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films X. Zhou, K. Uchida, H. Mizuta, and S. Oda Journal of Applied Physics June 2009 105 124518 (5 pages)

Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure X. Zhou, K. Uchida, H. Mizuta, and S. Oda Journal of Applied Physics August 2009 044511 (6 pages)

Vapor-solid-solid radial growth of Ge nanowires C. B. Li, K. Usami, H. Mizuta, S. Oda Journal of Applied Physics August 2009 106 046102 (3 pages)

Control of Inter-dot Electrostatic Coupling by a Side Gate in Silicon Double Quantum Dot Operating at 4.5 K G. Yamahata, T. Kodera, H. Mizuta, K. Uchida, S. Oda Applied Physics Express September 2009 2 (9) 095002 (3 pages)

Electro-Mechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory T. Nagami, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, H. Mizuta and S. Oda Japanese Journal of Applied Physics November 2009 48 114502 (5 pages)

MULTI-SCALE SIMULATION OF HYBRID SILICON NANO-ELECTROMECHANICAL (NEM) INFORMATION SYSTEMS Hiroshi Mizuta, Mario A.G. Ramirez, Yoshishige Tsuchiya, Tasuku Nagami, Shun-ichiro Sawai, Shunri Oda, Masakuni Okamoto

Journal of Automation, Mobile Robotics & Intelligent Systems November 2009 3 58-61


   International Conferences


Parameter Randomness Analysis of Multiple Tunnel Junctions Aditi Goyal, Muhammad A Rafiq, Ken Uchida, Shunri Oda IEEE Silicon Nanoelectronics Workshop June 2009 Kyoto

Study of single-electron transport via suspended double silicon quantum dots J. Ogi, T. Ferrus, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda, and H. Mizuta IEEE Silicon Nanoelectronics Workshop June 2009 Kyoto

Engineering of Heterostructured Tunnel Barrier for Non-Volatile Memory Applications: Potential of Pr-based Heterostructured Barrier as a Tunneling Oxide Tomoyuki Kurihara, Yohei Nagahama, Daisuke Kobayashi, Hiroki Niikura, Yoshishige Tsuchiya, Hiroshi Mizuta, Hiroshi Nohira, Ken Uchida, and Shunri Oda IEEE Silicon Nanoelectronics Workshop June 2009 Kyoto

Lateral conduction of Si nanorystals by thin film transistor structures Xin Zhou, Ken Uchida, Hiroshi Mizuta, and Shunri Oda IEEE Silicon Nanoelectronics Workshop June 2009 Kyoto

Current oscillations observed for sparse Si nanorystal thin films Xin Zhou, Ken Uchida, Hiroshi Mizuta, and Shunri Oda IEEE Silicon Nanoelectronics Workshop June 2009 Kyoto

NeoSilicon Materials S. Oda Materials Research Society April 2009 San Francisco invited

Fabrication of nano Si ink and two-dimensionally assembled Si nanocrystals T. Ishikawa, H. Nikaido, K. Usami, K. Uchida, S. Oda 35th International Conference on Micro & Nano Engineering September 2009 Ghent

Performance Projections for Nanomechanical Memory S. Oda SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies: Processes, Devices, and Architectures October 2009 Singapore invited

Silicon quantum dots and related devices S. Oda G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists October 2009 Tokyo invited

Electron transport through coupled Si quantum dots toward quantum information devices Gento Yamahata, Tetsuo Kodera, Hiroshi Mizuta, Ken Uchida, and Shunri Oda G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists October 2009 Tokyo

Suspended quantum dot devices for sensor or quantum bit applications J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, H. Mizuta and S. Oda G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists October 2009 Tokyo

Scaling Analysis of NEMS Memory Devices T. Nagami, Y. Tsuchiya, K. Uchida, H. Mizuta, and S. Oda G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists October 2009 Tokyo

Phosphorous-Doping in Silicon Nanocrystals by using VHF Plasma Y. Nakamine, T. Kodera, K. Uchida and S. Oda G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists October 2009 Tokyo

Design Optimization of MEMS(NEMS) Resonator by 3-D Anisotropic Thermoelastic Modeling Chao Yan, Ken Uchida and Shunri Oda G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists October 2009 Tokyo

Modeling of Band-to-Band Tunneling in MOS Structures Berrin Pinar Algul, Ken Uchida, Shunri Oda
G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists October 2009 Tokyo

Transport Properties of Silicon Nanowire with Ferromagnetic Leads Jean L. Tarun, Shaoyun Huang, Ken Uchida, Naoki Fukata, Koji Ishibashi and Shunri Oda
G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists October 2009 Tokyo

Artificial Membrane Interfacial Layers via 1D nanostructures for Bio-Sensors Ian C. Robertson, Ken Uchida and Shunri Oda
G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists October 2009 Tokyo

Preparation and characterization of P-doped Ge nanowires by VLS-CVD Liang HE, Koichi Usami, Ken Uchida and Shunri Oda
G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists October 2009 Tokyo

Fabrication and characterization of silicon double quantum dots towards spin qubits T. Kodera, G. Yamahata, T. Kambara, T. Ferrus, D. A. Williams, K. Uchida, Y. Arakawa, S. Oda
G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists October 2009 Tokyo

Carrier transport in ensemble of Si nanocrystals prepared by VHF plasma process Xin Zhou, Ken Uchida and Shunri Oda
G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists October 2009 Tokyo

Formation of two-dimensional array of Si nanocrystals using nano Si ink Tetsuya Ishikawa, Hiroki Nikaido, Koichi Usami, Ken Uchida, Shunri Oda
G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists October 2009 Tokyo

Thermotherapy for Cancer Using Silicon Nanocrystals D. Hippo, Y. Nakamine, K. Uchida, and S. Oda
G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists October 2009 Tokyo

Removal of Surface Oxide Layer from Silicon Nanocrystals by HF Vapor Etching Y. Nakamine, T. Kodera, K. Uchida, and S. Oda International Microprocesses and Nanotechnology Conference (MNC 2009) November 2009 Sapporo

Silicon quantum dots devices
S. Oda IEEE EDS Minicolloquim on the Past and Future of Integrated Circuits November 2009 Thiruvannamalai invited

Silicon quantum dots devices
S. Oda IEEE EDS Minicolloquim on the Past and Future of Integrated Circuits November 2009 port Blair invited

Electron-phonon interaction in suspended Si double quantum dots J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda,
and H. Mizuta
International Microprocesses and Nanotechnology Conference (MNC 2009) November 2009 Sapporo

Improvements of transport properties in silicon quantum dots T. Kodera, G. Yamahata, T. Kambara, T. Ferrus , D. Williams, S. Oda, Y. Arakawa International Symposium on Quantum Nanophotonics and Nanoelectronics (ISQNN 2009), ThP-4, pp.76, Tokyo, Japan (November 2009)

Direct Observation of Subband StructureIEDM2009s in (110) pMOSFETs under High Magnetic Field:
Impact of Energy Split Between Bands and Effective Masses on Hole Mobility
T. Takahashi, G. Yamahata, J. Ogi, T. Kodera, S. Oda and K. Uchida IEEE International Electron Devices Meeting (IEDM) December 2009 Baltimore

Silicon quantum dots devices
S. Oda International workshop on Physics
of Semiconductor and Devices December 2009 Delhi invited


   Domestic Conferences


シリコン量子ドットデバイスの制御性向上に関する検討 山端元音,土屋良重,水田 博,内田 建,小田俊理 第56回応用物理学関係連合講演会 March 2009 つくば市 invited

Trap effects on carrier transport in Si nanocrystals thin film transistor Xin Zhou,中峯嘉文,内田 建,小田俊理 第56回応用物理学関係連合講演会 March 2009 つくば市

Siナノブリッジチャネルに埋め込まれた結合二重量子ドット特性観測 小木 純,Thierry Ferrus,土屋良重,内田 建,David Williams,水田 博,小田俊理 第56回応用物理学関係連合講演会 March 2009 つくば市

pn接合部でのトラップを介したトンネリングを考慮したNEMSメモリの
動作特性と微細化の検討
永見 佑,土屋良重,斎藤慎一,新井 唯,嶋田壽一,水田 博,内田 建,小田俊理 第56回応用物理学関係連合講演会 March 2009 つくば市

VHFプラズマにより作製されたSi量子ドットのPドーピング 中峯嘉文,内田 建,小田俊理 第56回応用物理学関係連合講演会 March 2009 つくば市

ラジカル窒化を用いたゲルマニウムナノワイヤデバイスの作製 村木太郎,李 伝波,増渕和典,宇佐美浩一,内田 建,小田俊理 第56回応用物理学関係連合講演会 March 2009 つくば市

Characteristics of current oscillations phenomenon in Si nanorystal thin films Xin Zhou,内田 建,小田俊理 第70回応用物理学会学術講演会 September 2009 富山

Langmuir-Blodgett法によるナノ結晶シリコン量子ドットの集積配列 二階堂広基,石川哲也,内田 建,小田俊理 第70回応用物理学会学術講演会 September 2009 富山

レーザ照射によるナノ結晶シリコンの温度上昇の観測 筆宝大平,中峯嘉文,内田 健,小田俊理 第70回応用物理学会学術講演会 September 2009 富山

MEMS(NEMS) 共振器設計のための体系的最適化法 晏超,内田 建,小田俊理 第70回応用物理学会学術講演会 September 2009 富山

トップゲートとサイドゲートによるシリコン結合量子ドットの静電結合制御 山端元音,小寺哲夫,水田 博,内田 建,小田俊理 第70回応用物理学会学術講演会 September 2009 富山

InAs量子ドットとInGaAs量子井戸を内包した縦型ピラー構造の電気伝導特性 小寺哲夫,大野圭司,中岡俊裕,熊谷直人,樽茶清悟,小田俊理,荒川泰彦 第70回応用物理学会学術講演会 September 2009 富山

シリコンナノテクノロジー:1次元、0次元、その先は? 小田俊理,内田 建 第70回応用物理学会学術講演会 September 2009 富山 invited

イントロダクトリートーク:ネオシリコン材料の構造制御と新機能 小田俊理 第70回応用物理学会学術講演会 September 2009 富山 invited

ナノエレクトロメカニカル構造を有するシリコンナノ機能デバイス 水田 博,土屋良重,小田俊理 第70回応用物理学会学術講演会 September 2009 富山 invited

シリコン結合量子ドットの電子輸送特性評価 小寺哲夫,Thierry Ferrus,山端元音,中岡俊裕,David Williams,小田俊理,荒川泰彦 日本物理学会秋季大会 September 2010 熊本


   Others

著書

量子化構造とデバイス
小田俊理
現代界面コロイド化学の基礎 第3版(日本化学会編、丸善) 215-219


2008

   Journal Papers


Nonequilibrium Transport Properties for a Three-site Quantum Wire Model "Yangdong Zheng, H. Mizuta and S. Oda" physica status solidi (c) January 2008 5 (1) 56-60

Theoretical Study of Nonequilibrium Electron Transport and Charge Distribution in a Three-site Quantum Wire "Yangdong Zheng, H. Mizuta and S. Oda" Japanese Journal of Applied Physics January 2008 47 (1A) 371-382

Vapor-Liquid-Solid Growth of Small- and Uniform-Diameter Silicon Nanowires at Low Temperature from Si2H6 "Saeed Akhtar, K. Usami, Y. Tsuchiya, H. Mizuta, and S. Oda" Applied Physics Express January 2008 1 (1) 014003 (3 pages)

Bottom-up approach to silicon nanoelectronics H. Mizuta and S. Oda Microelectronics Journal February 2008 invited 39 (2) 171-176

Strongly coupled multiple-dot characteristics in dual recess structured silicon channel "M. Manoharan, Y. Kawata, Y. Tsuchiya, S. Oda and H. Mizuta" Journal of Applied Physics February 2008 103 043719 (6 pages)

Room temperature single electron charging in single silicon nanochains "M. A. Rafiq, Z. A. K. Durrani, H. Mizuta, A. Colli, P. Servati, A. C. Ferrari, W. I. Milne, and S. Oda" Journal of Applied Physics March 2008 103 053705 (4 pages)

Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate discrete energy states B. Pruvost,H. Mizuta,S. Oda Journal of Applied Physics March 2008 103 054508 (10 pages)

Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation "M. Manoharan, Y. Tsuchiya, S. Oda and H. Mizuta" Applied Physics Letters March 2008 92 092110 (3 pages)

Impact of channel constrictions on the formation of multiple tunnel junctions in heavily doped silicon single electron transistors "M. Manoharan, S. Oda and H. Mizuta" Applied Physics Letters March 2008 93 112107 (3 pages)

Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge "J. Ogi, Y. Tsuchiya, H. Mizuta, and S. Oda" Microelectronics Engineering May 2008 85 (5-6) 1410-1412

Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir?Blodgett Technique "A.Tanaka, Y.Tsuchiya, K.Usami, S.Saito, T.Arai, H.Mizuta, S.Oda" Japanese Journal of Applied Physics May 2008 47 (5) 3731-3734

Observation of Quantum Level Spectrum for Silicon Double Single-Electron Transistors "Y. Kawata, Tomohiro Yamaguchi, Koji Ishibashi, Yoshishige Tsuchiya, Shunri Oda, Hiroshi Mizuta" Applied Physics Express May 2008 1 (5) 051401 (3 pages)

Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures "Gento Yamahata, Yoshishige Tsuchiya, Shunri Oda, Z. A. K. Durrani, Hiroshi Mizuta" Japanese Journal of Applied Physics June 2008 47 (6) 4820-4826

Size-Dependent Structural Characterization of Silicon Nanowires "Saeed Akhtar, K. Usami, Y. Tsuchiya, H. Mizuta, and S. Oda" Japanese Journal of Applied Physics June 2008 47 (6) 5053-5056

Influence of nanocrystal size on conduction mechanism across silicon nanocrystals "X. Zhou, K. Usami, M. A. Rafiq. H. Mizuta, Y. Tsuchiya, and S. Oda" Journal of Applied Physics July 2008 104 24518

The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate "C. B. Li, K. Usami, T. Muraki, H. Mizuta, K. Uchida, S. Oda " Applied Physics Letters August 2008 93 041917 (3 pages)

Formation Mechanism of 100 nm-Scale Periodic-Structures in Silicon Using Magnetic-Field-Assisted Anodization "D. Hippo, Y. Nakamine, K. Urakawa, Y. Kawata, Y. Tsuchiya, H. Mizuta, N. Koshida and S. Oda" Japanese Journal of Applied Physics September 2008 47 7398-7402

Impact of key circuit parameters on signal-to-noise ratio characteristics for the radio-frequency single electron transistors "M. Manoharan, B. Pruvost,H. Mizuta,S. Oda" IEEE Transactions on Nanotechnology September 2008 7 (3) 266-272

Study of Single-Charge Polarization on a Pair of Charge Qubits Integrated onto Silicon Double Single-Electron Transistor Readout "Y. Kawata, Y. Tsuchiya, S. Oda, H. Mizuta" IEEE Transactions on Nanotechnology September 2008 7 (5) 617-623

Visible Electroluminescence from Spherical-shaped Silicon Nanocrystals "H-J Cheong, A. Tanaka, D. Hippo, K. Usami, Y. Tsuchiya, H. Mizuta, and S. Oda" Japanese Journal of Applied Physics October 2008 47 8137-8140

Influence of the Crystal Orientation of Substrate on Low Temperature Synthesis of Silicon Nanowires from Si2H6 "Saeed Akhtar, A Tanaka, K. Usami, Y. Tsuchiya and S. Oda" Thin Solid Films November 2008 517 (1) 317-319

Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K "M. Manoharan, Y. Tsuchiya, S. Oda and H. Mizuta" Nano Letters 2008 8(12) 4648-4652

Field-dependant hopping conduction in silicon nanocrystal films "M. A. Rafiq, Z. A. K. Durrani, H. Mizuta, A. Colli, P. Servati, A. C. Ferrari, W. I. Milne, and S. Oda" Journal of Applied Physics 2008 104 123710 (3 pages)

Hybrid silicon nanotechnologies for advanced information processing "H. Mizuta, Y. Tsuchiya and S. Oda" International Conference on Nano and Microelectronics (ICONAME2008)

VLS growth of germanium nanowires on SiO2-terminanted Si (111) substrate "C. B. Li, K. Usami, H. Mizuta, K. Uchida, S. Oda" Solid State Devices and Materials Conference, Extended Abstracts

Hybrid silicon nanotechnologies for 'More-than-Moore' and 'Beyond-CMOS' domains "H. Mizuta, Y. Tsuchiya and S. Oda" 7th International Conference on Global Research and Education - Inter-Academia

Co-integration of Silicon Nanodevices and NEMS for Advanced Information Processing "H. Mizuta, T. Nagami, J. Ogi, B. Pruvost, M.A.G. Ram?rez, H. Yoshimura, Y. Tsuchiya and S. Oda" 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008)

Physics and Applications of Hybrid Silicon Nanoelectromechanical Devices "H. Mizuta, Y. Tsuchiya and S. Oda" 5th International Symposium on Nanovision Science / 10th Takayanagi Kenjiro Memorial Symposium

Electron transport and photonic properties of Si nanocrystals prepared by VHF plasma processes S. Oda 2nd International Workshop on Semiconducting Nanoparticles


   International Conferences


Silicon quantum dots: the future of electronics and photonics? S. Oda "Workshop-cum-Symposium on ""Compact Modeling of Advance MOSFET structures and Mixed Mode Applications""" January 2008 Delhi invited

Nano-silicon for novel quantum dot based electronic and photonic devices S. Oda WIMNACT 2008 March 2008 Sikkim invited

Mechanism of One-Directional Nano Etching in Silicon Using Magnetic-Field-Assisted Anodization "D. Hippo, K. Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshida, S.Oda" Porous Semiconductors Science and Technology 2008 March 2008 Mallorca

Single electron transport simulations in silicon nanochains "M.A. Rafiq, Z. A. K. Durrani, H. Mizuta, and S. Oda" Condensed Matter and Materials Physics Conference March 2008 London

Silicon quantum dots: the future of electronics and photonics? S. Oda 4th Field-Wise Seminar on Nanoelectronics and Nanophotonics March 2008 Yangon invited

Silicon-based Quantum Information Devices "Gento Yamahata, Yoshiyuki Kawata, Manoharan Muruganathan, and Shunri Oda, Yoshishige Tsuchiya, and Hiroshi Mizuta" The forth International Nanotechnology Conference on Communication and Cooperation (INC-4) April 2008 Tokyo

"Integration, Assembly and Doping of Nanocrystalline Silicon Quantum Dots" "T. Ishikawa, A. Tanaka, N. Inaba, S. Nishimoto, K. Usami and S. Oda, Y. Tsuchiya, H. Mizuta," The forth International Nanotechnology Conference on Communication and Cooperation (INC-4) April 2008 Tokyo

NEMS Memory Devices for Future Integrated Systems "T. Nagami, S. Matsuda, N. Momo, S. Oda, Y. Tsuchiya, H. Mizuta," The forth International Nanotechnology Conference on Communication and Cooperation (INC-4) April 2008 Tokyo

Silicon quantum dot devices. S. Oda 26th International Conference on Microelectronics May 2008 "Nis, Serbia" invited

Silicon quantum dot devices. S. Oda Japan-Brazil Memorial Symposium on Science and Technology for the Celebration of 100 years of Japanese Immigration to Brazil June 2008 Sao Paulo invited

Design optimization of NEMS switches for single-electron logic applications "B. Pruvost, H. Mizuta, and S. Oda" IEEE Silicon Nanoelectrinics Workshop June 2008 Honolulu

Controlled Ge nanowire growth on patterned Au catalyst substrate "C. B. Li, K. Usami, H. Mizuta, and S. Oda" IEEE Silicon Nanoelectrinics Workshop June 2008 Honolulu

Electron transport through silicon multiple quantum dot array devices "G. Yamahata, Y. Tsuchiya, H. Mizuta, and S. Oda" IEEE Silicon Nanoelectrinics Workshop June 2008 Honolulu

Anomalous suppression of single-electron tunneling observed for Si nanobridge transistors with a suspended quantum dot cavity "J. Ogi, M. Manoharan, Y. Tsuchiya, S. Oda, and H. Mizuta" IEEE Silicon Nanoelectrinics Workshop June 2008 Honolulu

Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors? "M. Manoharan, Y. Tsuchiya, S. Oda, and H. Mizuta" IEEE Silicon Nanoelectrinics Workshop June 2008 Honolulu

Atomic study of phonon states in hydrogen-terminated Si ultra-thin films "S. Sawai, S. Uno, M. Okamoto, Y. Tsuchiya, S. Oda, and H. Mizuta" IEEE Silicon Nanoelectrinics Workshop June 2008 Honolulu

Transient response anlaysis of programming/readout characteristics for NEMS memory "T. Nagami, S. Matsuda, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, H. Mizuta, and S. Oda" IEEE Silicon Nanoelectrinics Workshop June 2008 Honolulu

P-type Si nanocrystal thin-film transistor "X. Zhou, M. A. Rafiq, H. Mizuta, and S. Oda" IEEE Silicon Nanoelectrinics Workshop June 2008 Honolulu

Observation of quantum level spectrum for silicon double single-electron transistors "Y. Kawata, T. Yamaguchi, K. Ishibashi, Y. Tsuchiya, S. Oda, and H. Mizuta," IEEE Silicon Nanoelectrinics Workshop June 2008 Honolulu

Switching properties of electromechanically bistable and multistable bridges for nonvolatile memory applications "Y. Tsuchiya, S. Matsuda, T. Nagami, S. Saito, T. Arai, T. Shimada, S. Oda, and H. Mizuta" IEEE Silicon Nanoelectrinics Workshop June 2008 Honolulu

Silicon quantum dots: the future of electronics and photonics? S. Oda Nano Korea 2008 August 2008 Seoul invited

The influence of surface condition on the growth of germanium nanowire on Si substrate "C. B. Li, K. Usami, H. Mizuta, and S. Oda" International Conference on Physics of Semiconductors August 2008 Rio de Janeiro

Silicon nanochains: Electron transport properties and applications "M. A. Rafiq, Z. A. K. Durran, H. Mizuta, A. Colli, P. Servati, A. C. Ferrari, W. I. Milne, and S. Oda" International Conference on Physics of Semiconductors August 2008 Rio de Janeiro

Size effect on hopping conduction in silicon nanocrystals "X. Zhou, M. A. Rafiq, H. Mizuta, and S. Oda" International Conference on Physics of Semiconductors August 2008 Rio de Janeiro

Silicon radio frequency single-electron transistors operating at above 4.2K "M. Manoharan, Y. Tsuchiya, S. Oda and H. Mizuta" "Solid State Devices and Materials Conference, Extended Abstracts" September 2008 Tsukuba

Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots "G. Yamahata, K. Uchida, S. Oda, Y. Tsuchiya, H. Mizuta" ESSDERC September 2008 Edinburgh

Detection of Single-Charge Polarisation in Silicon Double Quantum Dots by Using Serially-Connected Multiple Single-Electron Transistors "Y. Kawata, S. Oda, Y. Tsuchiya, H. Mizuta," ESSDERC September 2008 Edinburgh

Phosphorous-doping in silicon nanocrystals "N. Inaba, Y. Nakamine, Y. Tsuchiya, H. Mizuta, K. Uchida, R. N. Pereira, A. R. Stegner, M. S. Brandt, M. Stutzmann, and S. Oda" 34th International Conference on Micro- and Nano-Engineering September 2008 Athens

Silicon nanocrystals light-emitters for optical interconnects "H-J Cheong, Y. Nakamine, D. Hippo, K. Uchida and Shunri Oda" 214th Meeting of The Electrochemical Society October 2008 Honolulu invited


   Domestic Conferences


Pr-silicate極薄膜界面化学結合状態のin-situ N2アニール処理依存性 古川亮介、土屋良重、北村幸司、野平博司、小田俊理 第13回「ゲートスタック研究会−材料・プロセス・評価の物理−」 February 2008 三島市

ダンピングを考慮したNEMSメモリの過渡応答特性の解析 永見 佑,松田真之介,土屋良重,斎藤慎一,新井 唯,嶋田壽一,水田 博,小田俊理 第55回応用物理学関係連合講演会 March 2008 船橋市

シリコン多重量子ドットアレイデバイスにおける電子輸送特性評価 山端元音,土屋良重,水田 博,小田俊理 第55回応用物理学関係連合講演会 March 2008 船橋市

磁場印加陽極酸化法による高アスペクト比2次元フォトニック結晶形成機構 筆宝大平,浦川 圭,土屋良重,水田 博,越田信義,小田俊理 第55回応用物理学関係連合講演会 March 2008 船橋市

Fabrication of Silicon Nanogap Electrodes for Measuring Single Nanocrystalline Silicon Quantum Dot Akhmadi Surawijaya,Ken Uchida,Shunri Oda 第69回応用物理学会学術講演会 September 2008 春日井

単電子論理回路応用に向けたNEMSスイッチ設計の最適化 Benjamin Pruvost,内田 建,水田 博,小田俊理 第69回応用物理学会学術講演会 September 2008 春日井

Operation of SOI-based radio frequency single electron transistor above 4.2 K Manoharan Muruganathan,Yoshishige Tsuchya,Hiroshi Mizuta,Ken Uchida,Shunri Oda 第69回応用物理学会学術講演会 September 2008 春日井

高密度細線シリコンナノワイヤ作製に向けたナノコロイド配列の検討 Saeed Akhtar,宇佐美浩一,内田 建,小田俊理 第69回応用物理学会学術講演会 September 2008 春日井

Silicon nanocrystal Thin film transistor Xin Zhou,内田 建,小田俊理 第69回応用物理学会学術講演会 September 2008 春日井

シリコン2次元フォトニック結晶によるSiナノ結晶の発光特性の制御 佐野 洋,中峯嘉文,筆宝大平,内田 建,小田俊理 第69回応用物理学会学術講演会 September 2008 春日井

シリコン3重結合量子ドットにおける電子輸送特性評価 山端元音,土屋良重,水田 博,内田 建,小田俊理 第69回応用物理学会学術講演会 September 2008 春日井

ナノ結晶シリコン量子ドットの表面修飾によるゼータ電位の変化 石川哲也,岡田哲男,内田 建,小田俊理 第69回応用物理学会学術講演会 September 2008 春日井

ディップコーティング法によるナノ結晶シリコン量子ドットの集積 石川哲也,内田 建,小田俊理 第69回応用物理学会学術講演会 September 2008 春日井

シリコン2重単電子トランジスタにおける量子準位スペクトルの観測 川田善之,山口智弘,石橋幸治,土屋良重,水田 博,内田 建,小田俊理 第69回応用物理学会学術講演会 September 2008 春日井

基板窒化処理によるシリコンナノ結晶ELデバイスの高性能化 鄭 恵貞,宇佐美浩一,内田 建,土屋良重,水田 博,小田俊理 第69回応用物理学会学術講演会 September 2008 春日井

   Others


Silicon quantum dots: the future of electronics and photonics? S. Oda Nanjing University April 2008 Nanjing invited

Nano-silicon for novel quantum dot based electronic and photonic devices S. Oda EPFL April 2008 Lausanne invited

Silicon quantum dots: the future of electronics and photonics? S. Oda Centre SI Summer School on Nanoelectronic Circuits and Tools July 2008 Lausanne invited

Novel Nano-ElectroMechanical-System Devices S. Oda Centre SI Summer School on Nanoelectronic Circuits and Tools July 2008 Lausanne invited


2007

   Journal Papers


New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures D. Hippo,
K. Urakawa,
Y. Kawata,
Y. Tsuchiya,
H. Mizuta,
N. Koshida
S. Oda
Japanese Journal of Applied Physics 46 (2) 633-637 2007 .
Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory T. Nagami, H. Mizuta, N. Momo, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada and S. Oda IEEE Trans. Electron Devices, Vol. 54 (5), pp. 1132 ? 1139, 2007, May.
3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs B. Pruvost, H. Mizuta, S. Oda IEEE Transactions on Nanotechnology, Vol.6 (2)218-224, 2007, March.

Integration of tunnel-coupled double nanocrystalline silicon quantum dots with a multiple gate single-electron transistor Japanese Y. Kawata, M. Khalafalla, K. Usami,Y. Tsuchiya, H. Mizuta and S. Oda Journal of Applied Physics, Vol. 46 (7A) , pp. 4386-4389,2007, July.
ChargeStorage and Electron/Light Emission Properties of Silicon Nanocrystals S. Oda, S. Y. Huang, M. A. Salem, D. Hippo and H. Mizuta Physica E, Vol. 38, pp. 59-63, 2007, April.


   International Conferences


Silicon-based nanoelectromechanical information devices H. Mizuta,
Y. Tsuchiya,
S. Oda
AMN-3 2007 Wellington

Nanocrystalline Si dot assembly based on the Langmuir-Blodgett method A.Tanaka,
Y.Tsuchiya,
K.Usami,
S.Saito,
T.Arai,
H.Mizuta,
S.Oda
AMN-3 2007 Wellington

Nano electromechanical system memory devices S. Oda,
Y. Tsuchiya
H. Mizuta
AMN-3 2007 Wellington

Low turn on voltage Electroluminescence based on size reduced SiQDs by using HF Hea Jeong Cheong, A. Tanaka, D. Hippo, K. Usami, Y. Tsuchiya, H. Mizuta, S. Oda CLEO/QELS 2007, 2007, May.

Influence of Crystal Orientation of Substrate on Low Temperature Synthesis of Silicon Nanowires from Si2H6 Saeed Akhtar, K. Usami, Y. Tsuchiya, H. Mizuta, and S. Oda 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5) , 2007, May.

Novel photonic and electron devices based on silicon nanocrystals S. Oda International Workshop on SEMIconductor NANOstructures 2007, 2007, June.

Ab-initio simulation of phonon properties of ultra-thin silicon films S. Sawai, H. Mizuta, S. Higashijima, S. Uno, M. Okamoto, Y. Tsuchiya, and S. Oda Frontier in Computational Science of Nanoscale Transport" (FCSNT2007), 2007, June.

State of the Art and the Future of Nanoelectronics S. Oda International Conference on Electrical Engineering and Informatics (ICEEI2007), 2007, June.

Voltage-limitation-free compact SET model incorporating the effects of spin-degenerate discrete energy states B. Pruvost, H. Mizuta, and S. Oda IEEE Silicon Nanoelectrinics Workshop, 4-12, 2007, June.

Fabrication and Characterization of Double Single-Electron Transistors as a Readout for Charge Qubits Y. Kawata, M. Manoharan, Y. Tsuchiya, H. Mizuta and S. Oda IEEE Silicon Nanoelectrinics Workshop, 4-46, 2007, June.

High-speed and Non-volatile Memory Devices Using Macroscopic Polarized Stack of Double Floating Gates Interconnected with Engineered Tunnel Oxide Barrier Y. Tsuchiya, T. Kurihara, D. Sato, H. Niikura, H. Mizuta and S. Oda IEEE Silicon Nanoelectrinics Workshop, 4-59, 2007, June.

Observation of strongly-coupled multiple-dot characteristics in the dual recess structured silicon channel with different oxidation conditions M. Manoharan, Y. Kawata, Y. Tsuchiya, H. Mizuta and S. Oda IEEE Silicon Nanoelectrinics Workshop, 4-62, 2007, June.

DFT simulation of dynamic charge states in double silicon quantum dots S. Higashijima, S. Sawai, Y. Tsuchiya, M. Okamoto, H. Mizuta, and S. Oda IEEE Silicon Nanoelectrinics Workshop, 6-3, 2007, June.

Theory of Nonequilibrium Transport Properties for a Three-site Quantum Wire Yangdong Zheng, Hiroshi Mizuta and Shunri Oda Frontiers in Computational Science of Nanoscale Transport (FCSNT2007), 2007, June.

Nonequilibrium Transport Properties for a Three-site Quantum wire Model Yangdong Zheng, Hiroshi Mizuta and Shunri Oda 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-15), 2007, July.

NeoSilicon Devices S. Oda 22nd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 22), 2007, August.

Control of electrostatic coupling observed for Si double quantum dot structures G. Yamahata,? Y. Tsuchiya, S. Oda and H. Mizuta Solid State Devices and Materials Conference, Extended Abstracts, 2007, September.

Study of Single-Charge Polarization on two Charge Qubits Integrated onto a Double Single-Electron Transistor Readout Y. Kawata, S. Nishimoto, Y. Tsuchiya, S. Oda and H. Mizuta Solid State Devices and Materials Conference, Extended Abstracts, 2007, September.

Optical Properties of Silicon Three-Dimensional Photonic Crystal Fabricated by Self-Aligned Two-Directional Electrochemical Etching Method D. Hippo, Y. Tsuchiya, H. Mizuta, S. Oda, K. Urakawa, N. Koshida 4th International Conference on Group IV Photonics, WP4, 2007, September.

Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge J. Ogi, Y. Tsuchiya, H. Mizuta, and S. Oda 33rd International Conference on Micro- and Nano-Engineering, 2007, September.

Nano-silicon for novel quantum dot based electronic and photonic devices S. Oda The Electrical and Electronics Engineering Fieldwise Seminar (EEE-FWS) 2007 on Advances in Systems and Information Technology, 2007, November.

Observation of Size Dependent Structural Defects in Silicon Nanowires Saeed Akhtar, K. Usami, Y. Tsuchiya, H. Mizuta, and S. Oda 20th International Microprocesses and Nanotechnology Conference (MNC 2007), 8B-13-5L, 2007, November.

Phonon properties of ultra thin silicon films S.Sawai, S.Uno, M.Okamoto, Y.Tsuchiya, S.Oda and H.Mizuta 2nd Workshop on ab initio phonon calculations, 2007, December.


   Domestic Conferences


MOCVD法により作製したPrシリケート極薄膜の化学結合状態のアニール処理依存性 古川亮介、
土屋良重、
松田徹、
野平博司、
水田博、
丸泉琢也、
白木靖寛、
服部健雄、
池永英司、
小林啓介、
小田俊理
第12回「ゲートスタック研究会−材料・プロセス・評価の物理−」 2007 三島市

Voltage-limitation-free comtact SET model incorporating the effects of spin-degenerate discrete energy states B. Pruvost,
H. Mizuta,
S. Oda
第54回応用物理学関係連合講演会 2007 相模原市

3次元フォトニック結晶への欠陥導入によるシリコン量子ドットの自然放出制御 筆宝大平,
浦川 圭,
土屋良重,
水田 博,
越田信義,
小田俊理
第54回応用物理学関係連合講演会 2007 相模原市

2電荷量子ビットに向けた2重単電子トランジスタ型電荷検出器の検討 川田善之,
土屋良重,
水田 博,
小田俊理
第54回応用物理学関係連合講演会 2007 相模原市

MOCVD法により作製したPrシリケート極薄膜の化学結合状態のアニール処理依存性 古川亮介、
土屋良重、
須藤貴也、
松田徹、
野平博司、
水田博、
丸泉琢也、
白木靖寛、
服部健雄、
池永英司、
小林啓介、
小田俊理
第54回応用物理学関係連合講演会 2007 相模原市

Low Temperature Synthesis of Silicon Nanowires S. Akhtar, A.Tanaka, Y.Tsuchiya, K.Usami, H. Mizuta, and S. Oda 第54回応用物理学関係連合講演会 2007 相模原市

シリコンナノクリスタルデバイス 小田俊理 ナノ学会第5回大会, 2007, 5月

シリコン量子ドットの作製とデバイス応用 小田俊理 電気化学秋季大会, 特1O19, 2007, 9月

VHFプラズマ気相形成シリコンナノドットへの不純物ドーピング 稲葉直樹,宇佐美浩一,土屋良重,水田博,小田俊理 第68回応用物理学会学術講演会, 4p-M-10, 2007, 9月

Conduction of size controlled silicon nanocrystals film Xin Zhou,Hea-Jeong Cheong,土屋良重,水田博,小田俊理 第68回応用物理学会学術講演会, 5a-ZF-5, 2007, 9月

第一原理計算によるシリコン極薄膜のフォノン解析 澤井俊一郎,東島賢,宇野重康,岡本政邦,土屋良重,水田博,小田俊理 第68回応用物理学会学術講演会, 5p-ZE-15, 2007, 9月

Suspended-Gate MOSFETのための梁構造の作製とC-V測定によるpull-inの観測 柴村純平,Benjamin Pruvost,土屋良重,宇佐美浩一,斎藤慎一,水田博,小田俊理 第68回応用物理学会学術講演会, 5p-ZE-2, 2007, 9月

SET-NEMS-ゲート可動式単電子トランジスタの研究- ",第68回応用物理学会学術講演会 BENJAMIN PRUVOST,SVERRE HAMRE,水田博,小田俊理 第68回応用物理学会学術講演会, 5p-ZE-3, 2007, 9月

シリコン量子ドットの作製とデバイス応用 小田俊理 電気化学秋季大会 2007 東京 invited

低温でのジシランを用いた単結晶シリコンナノワイヤーの作製 SAEED AKHTAR,田中敦之,宇佐美浩一,土屋良重,水田博,小田俊理 第68回応用物理学会学術講演会, 5p-ZE-4, 2007, 9月

ナノ結晶シリコンドット発光デバイスの断面構造解析と窒化膜を利用した高性能化の検討 鄭恵貞,栗原智之,田中敦之,宇佐美浩一,土屋良重,水田博,小田俊理 第68回応用物理学会学術講演会, 6a-L-12, 2007, 9月

表面修飾したナノ結晶シリコンドットを用いたLB膜作製 田中敦之,土屋良重,宇佐美浩一,斎藤慎一,新井唯,水田博,小田俊理 第68回応用物理学会学術講演会, 6a-M-7, 2007, 9月

スタック型二重フローティングゲート分極構造の作製と評価 栗原智之,新倉浩樹,土屋良重,水田博,小田俊理 第68回応用物理学会学術講演会, 6a-ZE-5, 2007, 9月

2方向エッチングによるシリコン3次元フォトニック結晶の作製とフォトニックバンドギャップ効果 筆宝大平,土屋良重,水田博,浦川圭,越田信義,小田俊理 第68回応用物理学会学術講演会, 7a-R-1, 2007, 9月

極薄熱酸化膜を界面層に用いたMOCVD堆積Pr系高誘電率絶縁膜の電気特性評価 古川亮介,土屋良重,野平博司,丸泉琢也,白木靖寛,小田俊理 第68回応用物理学会学術講演会, 7a-ZM-9, 2007, 9月

NEMSメモリデバイス実現に向けた電荷注入2次元シリコンナノドット層のKFM観察 松田真之介,永見佑,土屋良重,斎藤慎一,新井唯,嶋田壽一,水田博,小田俊理 第68回応用物理学会学術講演会, 8p-ZL-1, 2007, 9月

量子ドットを有するシリコンナノブリッジトランジスタの電子輸送特性評価 小木純,土屋良重,水田博,小田俊理 第68回応用物理学会学術講演会, 8p-ZL-3, 2007, 9月

シリコン2重結合量子ドット構造における静電結合制御 山端元音,土屋良重,水田博,小田俊理 第68回応用物理学会学術講演会, 8p-ZL-4, 2007, 9月

Formation of strongly-coupled multiple-dot in the dual recess structured silicon channel Manoharan Muruganathan,川田善之,Mohammed Khalafalla,土屋良重,水田博,小田俊理 第68回応用物理学会学術講演会, 8p-ZL-5, 2007, 9月

Characteristic of Single Nanocrystalline Silicon Quantum Dot Resonant Tunneling Diodes in Series Combination Akhmadi Surawijaya,Yoshishige Tsuchiya,Hiroshi Mizuta,Shunri Oda 第68回応用物理学会学術講演会, 8p-ZL-6, 2007, 9月



2006

   Journal Papers


Bottom-up approach to silicon nanoelectronics H. Mizuta and
S. Oda
Microelectronics Journal;
(2006)

Nano-electro-mechanical nonvolatile memory device incorporating nanocrystalline Si dots Y. Tsuchiya,
K. Takai,
N. Momo,
T. Nagami,
S. Yamaguchi,
T. Shimada,
H. Mizuta and
S. Oda
Journal of Applied Physics;
(2006)

Observation and Analysis of Tunneling Properties of a Single Spherical Nanocrystalline Silicon Quantum Dot A. Surawijaya,
H. Mizuta and
S. Oda
Japanese Journal of Applied Physics;
45(4B)3638-3641(2006)

Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory T. Nagami,
H. Mizuta,
N.Momo,
Y. Tsuchiya,
S. Saito,
T. Arai,
T. Shimada and
S. Oda
IEEE Trans. Electron Devices(2006)

High-Density Assembly of Nanocrystalline Silicon Quantum Dots A. Tanaka,
Y. Tsuchiya,
K. Usami,
H. Mizuta and
S. Oda
Current Applied Physics;
6
(3)344-347(2006)

Observation of Interdot Coupling Phenomena in Nanocrystalline Silicon Point-Contact Structures M. Khalafalla,
H. Mizuta,
Z. A.K. Durrani,
H. Ahmed and
S. Oda
Current Applied Physics;
6 (3)536-540(2006)


   International Conferences


Broadband Variable Chromatic Dispersion in Photonic-Band Electro-Optic Waveguide K. Ogawa,
K. Tomizawa,
Y-T. Tan,
My The Doan,
Yu Ming Bin and
Dim-Lee Kwong,
S. Yamada,
J. B. Cole,
Y. Katayama,
H. Mizuta and
S. Oda
OFC 2006,
Anaheim(March 2006)

Nanocrystalline Silicon Quantum Dot Devices S. Oda and
H. Mizuta
Electrochemical Society,
Denver(May 2006)

Charge Storage and Electron/Light Emission Properties of Silicon Nanocrystals S. Oda and
H. Mizuta
E-MRS Spring Meeting,
Nice(May 2006)

Visible Electroluminescence from Size-Controlled Silicon
Quantum Dots
Hea Jeong Cheong,
D. Hippo,
A. Tanaka,
K. Usami,
Y. Tsuchiya,
H. Mizuta and
S. Oda
CLEO/QELS 2006
Long Beach(May 2006)

Fabrication of Silicon 3D Photonic Crystal Structures in 100nm Scale Using Double Directional Etchings Method D. Hippo,
Y. Kawata,
Y. Tsuchiya,
H. Mizuta,
S. Oda,
K. Urakawa and
N. Koshida
CLEO/QELS 2006
Long Beach(May 2006)

Design and Analysis of Functional NEMS-gate MOSFETs and SETs B. Pruvost,
H. Mizuta,
S. Oda
IEEE Silicon Nanoelectrinics Workshop
Honolulu(June 2006)

Fabrication and evaluation of Si nanobridge transistor J. Ogi,
N. Momo,
M.A.H. Khalafalla,
Y. Tsuchiya,
H. Mizuta and
S. Oda
IEEE Silicon Nanoelectrinics Workshop
Honolulu(June 2006)

Fabrication and characterization of nanoscale suspended floating gates for NEMS memory N. Momo,
T. Nagami,
S. Matsuda,
Y. Tsuchiya,
S. Saito,
T. Arai,
Y. Kimura,
T. Shimada,
H. Mizuta and
S. Oda
IEEE Silicon Nanoelectrinics Workshop
Honolulu(June 2006)

Electro-Mechanical simulation of programming/readout characteristics for NEMS memory T. Nagami,
N.Momo,
Y. Tsuchiya,
S. Saito,
T. Arai,
T. Shimada,
H. Mizuta and
S. Oda
IEEE Silicon Nanoelectrinics Workshop
Honolulu(June 2006)

Observation of quantum effects in the electron transport characteristics of a nanocrystalline silicon point contact transistor M. Khalafalla,
H. Mizuta,
Z. A.K. Durrani and
S. Oda
ICPS
Vienna(July 2006)

Preparation, characterization and application of nanocrystalline silicon quantum dot devices S. Oda Rencontres du Vietnam 2006: Nanophysics: from fundamentals to applications
Hanoi(August 2006)

Tunnel-coupled double nanocrystalline Si
quantum dots integrated into a singleelectron transistor
Y. Kawata,
M. Khalafalla,
K. Usami,
Y. Tsuchiya,
H. Mizuta and
S. Oda
Solid State Devices and Materials Conference, Extended Abstracts
Yokohama(September 2006)

Possible Nonequilibrium Kondo
Effect in a Nanocrystalline Silicon
Point-Contact Transistor
M. A. H. Khalafalla,
H. Mizuta,
S. Oda and
Z. A. K. Durrani
Solid State Devices and Materials Conference, Extended Abstracts
Yokohama(September 2006)

Hybrid simulation of the RFSET and its charge sensitivity analysis M. Manoharan,
H. Mizuta and
S. Oda
Solid State Devices and Materials Conference, Extended Abstracts
Yokohama(September 2006)

NeoSilicon: Novel functional materials with controlled interaction between quantum dots S. Oda,
Y. Tsuchiya and
H. Mizuta
International Topical Workshop "Tera- and Nano-Devices:
Physics and Modeling"
Aizu(October 2006)

Nanocrystalline Silicon Quantum Dot Devices S. Oda,
S. Y. Huang,
M. A. Salem,
D. Hippo,
A. Tanaka,
Y. Tsuchiya and
H. Mizuta
8th International Conference on Solid-State and Integrated-Circuit
Technology
Shanghai(October 2006)


   Domestic Conferences

  2方向エッチングによるシリコン3次元フォトニック結晶の作製 筆宝大平,
浦川 圭,
川田善之,
土屋良重,
水田 博,
越田信義,
小田俊理
第53回応用物理学関係連合講演会;
東京(March 2006)

分散溶媒を用いたナノ結晶シリコンドット集積化技術:傾斜基板上での集積化 田中敦之,
土屋良重,
宇佐美浩一,
水田 博,
小田俊理
第53回応用物理学関係連合講演会;
東京(March 2006)

ナノエレクトロメカニカルゲートを有する高機能MOSFET及びSETの設計・解析 B. Pruvost,
H. Mizuta,
S. Oda
第53回応用物理学関係連合講演会;
東京(March 2006)

SiO2/HfO2/SiO2積層トンネル膜を用いたスタック型二重フローティングゲートメモリ 佐藤大典,
新倉浩樹,
土屋良重,
水田 博,
野平博司,
丸泉琢也,
白木靖寛,
小田俊理
第53回応用物理学関係連合講演会;
東京(March 2006)

マルチゲートシリコン単電子トランジスタの作製 川田善之,
M. Kharafalla,
宇佐美浩一,
土屋良重,
水田 博,
小田俊理
第53回応用物理学関係連合講演会;
東京(March 2006)

シリコンナノブリッジトランジスタの作製と評価 小木 純,
百々信幸,
M. Khalafalla,
土屋良重,
水田 博,
小田俊理
第53回応用物理学関係連合講演会;
東京(March 2006)

SET-Spiceハイブリッドシミュレーションを用いたRE-SETの感度解析 M. Muruganathan,
H. Mizuta,
S. Oda
第53回応用物理学関係連合講演会;
東京(March 2006)

A Few Electron Memory Device Based on Surface Nitrided Nanocrystalline Silicon Dots S. Huang,
宇佐美浩一,
土屋良重,
水田 博,
小田俊理
第53回応用物理学関係連合講演会;
東京(March 2006)

Resonant Tunneling Device Using a Single Nanocrystalline Silicon Quantum Dot A Surawijaya,
Y. Tsuchiya,
H. Mizuta,
S. Oda
第53回応用物理学関係連合講演会;
東京(March 2006)

3次元有限要素シミュレーションによるNEMSメモリのスイッチング電圧低減の検討 永見 佑,
百々信幸,
土屋良重,
斎藤慎一,
新井 唯,
嶋田壽一,
水田 博,
小田俊理
第53回応用物理学関係連合講演会;
東京(March 2006)

NEMSメモリデバイスの実現に向けた2層ブリッジ構造体の作製 百々信幸,
永見 佑,
土屋良重,
斎藤慎一,
新井 唯,
嶋田壽一,
水田 博,
小田俊理
第53回応用物理学関係連合講演会;
東京(March 2006)

シリコン量子ドットからの可視エレクトロルミネッセンスの観測 鄭 恵貞,
筆宝大平,
田中敦之,
宇佐美浩一,
土屋良重,
水田 博,
小田俊理
第53回応用物理学関係連合講演会;
東京(March 2006)

2方向エッチングによるシリコン3次元フォトニック結晶への欠陥導入プロセス 筆宝大平,
浦川圭,
川田善之,
土屋良重,
水田博,
越田信義,
小田俊理
第67回応用物理学会学術講演会
草津(August 2006)

分散液中のナノ結晶シリコンドットの表面修飾 向井 崇,
田中敦之,
土屋良重,
宇佐美浩一,
水田 博,
小田俊理
第67回応用物理学会学術講演会
草津(August 2006)

LB膜作製法を用いたナノ結晶シリコンドット集積化技術 田中敦之,
土屋良重,
宇佐美浩一,
齋藤真一,
新井 唯,
水田 博,
小田俊理
第67回応用物理学会学術講演会
草津(August 2006)

シリコン多重量子ドットアレイデバイスの作製 山端元音,
土屋良重,
水田 博,
小田俊理
第67回応用物理学会学術講演会
草津(August 2006)

第一原理計算によるSiO2/Si/SiO2ナノ構造中のフォノン解析 澤井俊一郎,
東島 賢,
土屋良重,
岡本政邦,
水田 博,
小田俊理
第67回応用物理学会学術講演会
草津(August 2006)

ナノ結晶シリコン二重量子ドットと単電子トランジスタの集積化 川田善之,
M. Kharafalla,
宇佐美浩一,
土屋良重,
水田 博,
小田俊理
第67回応用物理学会学術講演会
草津(August 2006)

RF-SETに向けた可変トンネルバリア・マルチゲートシリコン単電子トランジスタ M. Muruganathan,
Y. Kawata,
H. Mizuta and
S. Oda
第67回応用物理学会学術講演会
草津(August 2006)

ナノ結晶シリコンポッイントコンタクトトランジスタにおけるクーロンギャップ内共嗚コンダクタンスの観測 M. Khalafalla,
水田 博,
小田俊理 and
Z. Durrani
第67回応用物理学会学術講演会
草津(August 2006)

シリコンナノブリッジトランジスタの作製と評価 小木 純,
M. Khalafalla,
永見 佑,
土屋良重,
水田 博,
小田俊理
第67回応用物理学会学術講演会
草津(August 2006)

スタック型二重フローティングゲート不揮発性メモリ特性シミュレーション 栗原智之,
新倉浩樹,
土屋良重,
水田 博,
小田俊理
第67回応用物理学会学術講演会
草津(August 2006)

有限要素シミュレーションによるNEMSメモリの読み出し特性の解析 永見 佑,
松田真之介,
土屋良重,
斎藤慎一,
新井 唯,
嶋田壽一,
水田 博,
小田俊理
第67回応用物理学会学術講演会
草津(August 2006)

NEMSメモリデバイスの実現にむけた電圧印加による曲がり梁のスイッチング検証 松田真之介,
永見 佑,
土屋良重,
斎藤慎一,
新井 唯,
嶋田壽一,
水田 博,
小田俊理
第67回応用物理学会学術講演会
草津(August 2006)

MOCVD法によるPrシリケートゲート絶縁膜のN2アニール効果の検討 古川亮介,
須藤貴也,
土屋良重,
野平博司,
水田 博,
丸泉琢也,
白木靖寛,
小田俊理
第67回応用物理学会学術講演会
草津(August 2006)

ハイブリッドSET-NEMS用いた構造を新機能デバイスの研究 B. Pruvost,
水田 博,
小田俊理
第67回応用物理学会学術講演会
草津(August 2006)

サイズ制御したシリコン量子ドットからの可視エレクトロルミネッセンス 鄭 恵貞,
田中敦之,
筆宝大平,
宇佐美浩一,
土屋良重,
水田 博,
小田俊理
第67回応用物理学会学術講演会
草津(September 2006)


   Books


Electron transport in nanocrystalline silicon H. Mizuta,
S. Uno,
N. Mori,
S. Oda and
N. Koshida
Springer;total 25 pages(2006)

Nanocrystalline Silicon Memory Devices S-Y. Huang,
H. Mizuta and
S. Oda
Handbook of Semiconductor
Nanostructures and Nanodevices
Edited by A. A. Balandin and K. L. Wang, American Scientific Publishers;(2006)


   Seminars

  Silicon Quantum Dot Devices S. Oda Chulalongkorn University;
Bangkok(March 2006)
  Silicon Nanoelectronics S. Oda Oxford University;
Oxford(May 2006)

Nanocrystalline silicon quantum dot devices S. Oda Cambridge University;
Cambridge(May 2006)

Nano-silicon for novel quantum dot based electronic and photonic devices S. Oda Trento University;
Trento(June 2006)

Nanocrystalline silicon quantum dot devices S. Oda IMEC;
Leuven(June 2006)

Nanocrystalline silicon quantum dot devices S. Oda Ecole Polytechnique;
Paris(June 2006)

   Others

  シリコン量子ドットデバイス 小田俊理 21世紀COE「量子ナノ物理学」第2回公開シンポジウム
東京(March 2006)


2005

   Journal Papers

Charge storage in nitrided nanocrystalline silicon dots S. Huang and
S. Oda
Applied Physics Letters;
87 (17)173107(2005)
In situ real-time spectroscopic ellipsometry study of HfO2 thin films grown by using the pulsed-source MOCVD Y. D. Zheng,
H Mizuta,
Y. Tsuchiya,
M. Endo,
D. Sato and
S. Oda
Journal of Applied Physics;
97,pp.023527(2005)
Atomic force microscope current-imaging study for current density through nanocrystalline silicon dots embedded in SiO2 M. A. Salem,
H. Mizuta,
S. Oda,
Y. Fu and
M. Willander
Japanese Journal of Applied Physics;
44(2)L88-L91(2005)

Study of charge quantization in individual silicon quantum dots using Kelvin Probe Force Microscopy M. A. Salem,
Y. Tsuchiya,
K. Usami,
H. Mizuta and
S. Oda
Japanese Journal of Applied Physics(2005)


   International Conferences


Nanocrystalline Silicon Quantum Dot Devices S. Oda 6th Workshop and IEEE EDS Mini-colloquia on NAnometer CMOS Technology,
Hsinchu, Taiwan(January 2005)
High-Density Assembly of Nanocrystalline Silicon Quantum Dots A. Tanaka,
Y. Tsuchiya,
K. Usami,
H. Mizuta and
S. Oda
Second International Conference on Advanced Materials and Nanotechnology,
Queenstown(February 2005)
Observation of Interdot Coupling Phenomena in Nanocrystalline Silicon
Point-Contact Structures
M. Khalafalla,
H. Mizuta,
Z. A.K. Durrani,
H. Ahmed and
S. Oda
Second International Conference on Advanced Materials and Nanotechnology,
Queenstown(February 2005)


   Domestic Conferences

  I可視域3次元シリコンフォトニック結晶の設計と作製プロセス 筆宝大平,
浦川 圭,
土屋良重,
水田 博,
越田信義,
小田俊理
第52回応用物理学関係連合講演会;
さいたま(March 2005)

分光エリプソメトリによるHfO2薄膜成長過程のその場観察:第一原理計算との比較 鄭 仰東,
土屋良重,
佐藤大典,
水田 博,
小田俊理
第52回応用物理学関係連合講演会;
さいたま(March 2005)

角度分解X線光電子分光法によるPrシリケート/Si(100)界面近傍の深さ方向化学結合状態分析 藤田啓嗣,
土屋良重,
野平博司,
水田 博,
丸泉琢也,
服部健雄,
小田俊理
第52回応用物理学関係連合講演会;
さいたま(March 2005)

ナノ結晶シリコンクロストランジスタにおける静電相互作用の変化とパーコレーションパスの解析 Mohammed Khalafalla,
水田 博,
Zahid Durrani,
小田俊理
第52回応用物理学関係連合講演会;
さいたま(March 2005)

ナノ結晶Siドット分散溶液を用いたSiナノドットクラスタデバイスの作製 山端元音,
田中敦之,
川田善之,
土屋良重,
斎藤真一,
新井 唯,
水田 博,
小田俊理
第52回応用物理学関係連合講演会;
さいたま(March 2005)

第一原理計算によるシリコンナノロッドの量子輸送シミュレーション 黒川康良,
東島 賢,
土屋良重,
岡本政邦,
水田 博,
小田俊理
第52回応用物理学関係連合講演会;
さいたま(March 2005)

Analysis of Combined Storage in Nitrided Nanocrystalline Silicon Dots Shaoyun Huang,
宇佐美浩一,
土屋良重,
水田 博,
小田俊理
第52回応用物理学関係連合講演会;
さいたま(March 2005)

分散溶媒を用いたナノ結晶シリコンドットの2次元集積化 田中敦之,
土屋良重,
宇佐美浩一,
水田 博,
小田俊理
第52回応用物理学関係連合講演会;
さいたま(March 2005)

歪みを考慮したNEMSメモリデバイスの高精度スイッチング動作解析 永見 佑,
百々信幸,
土屋良重,
斎藤慎一,
新井 唯,
嶋田壽一,
水田 博,
小田俊理
第52回応用物理学関係連合講演会;
さいたま(March 2005)

SiH4/H2/Arガス混合プラズマによるナノ結晶シリコンの作製と評価 池澤健太,
土屋良重,
宇佐美浩一,
水田 博,
小田俊理
第52回応用物理学関係連合講演会;
さいたま(March 2005)


2004

   Journal Papers

Coherent states in a coupled quantum dot nanocrystalline silicon transistor M. A. H. Khalafalla,
Z. A. K. Durrani and
H. Mizuta
Applied Physics Letters;
85(12)2262-2264(2004)
Nanosilicon for single-electron devices H. Mizuta,
Y. Furuta,
T. Kamiya,
Y.T. Tan,
Z.A.K. Durrani,
S. Amakawa,
K. Nakazato and
H. Ahmed
Current Applied Physics
498-101(2004)
Improved Off-Current and Subthreshold Slope in Aggressively Scaled Poly-Si TFTs With a Single Grain Boundary in the Channel P. M. Walker,
H. Mizuta,
S. Uno,
Y. Furuta and
D. G. Hasko
IEEE Transactions on Electron Devices
51(2) 212-219(2004)
  Towards Long-Term Retention-Time Single-Electron-Memory Devices Based on Nitrided Nanocrystalline Silicon Dots S. Huang,
K. Arai,
K. Usami and
S. Oda
IEEE Transactions on Nanotechnology
3 (1) 210-214(2004)
Nanocrystalline silicon dot displacement using speed-controlled tapping-mode atomic force microscopy S. Kanjanachuchai,
Y. Tsuchiya,
K. Usami and
S. Oda
Microelectronic Engineering 73-74 615-619(2004)
Probing electron charging in nanocrystalline Si dots using Kelvin Probe Force Microscopy M. A. Salem,
H. Mizuta and
S. Oda
Applied Physics Letters
85(15)3262-3264(2004)


   International Conferences


Bottom-up Silicon Nanoelectronics(invited) H. Mizuta,
M. A. H. Khalafalla,
Z. A. K. Durrania,
S. Uno,
N. Koshida,
Y.Tsuchiya and
S. Oda
7th International Conference on Solid-State and Integrated-Circuit Technology,
Beijing(October 2004)

Electron Transport Properties and Device Applications of Nanocrystalline Silicon Quantum Dots(invited) H. Mizuta,
M. A. H. Khalafalla,
Z. A. K. Durrania,
S. Uno,
N. Koshida,
Y.Tsuchiya and
S. Oda
The Electrochemical Society,
Honolulu(October 2004)
  Formation of an Ordered Array of nc-Si Dots by Using a Solution Droplet Evaporation Method Y. Tsuchiya,
T. Iwasa,
A. Tanaka,
K. Usami,
H. Mizuta and
S. Oda
MRS Spring Meeting,
San Francisco(April 2004)

Nano Electromechanical Memory Device Usingnc-Si Dots Y. Tsuchiya, K. Takai, N. Momo, S. Yamaguchi, T. Shimada, S. Koyama, K. Takashima, Y. Higo, H. Mizuta and S. Oda Silicon Nanoelectrinics Workshop, Honolulu (June 2004)

Electron coupling states in quantum dots in nanocrystalline silicon M. Khalafalla, H. Mizuta, Z. A. K. Durrani, H. Ahmed and S. Oda Silicon Nanoelectrinics Workshop, Honolulu (June 2004)

Pr-silicate Ultrathin Films for High-k Gate Dielectrics Prepared by Metal-Organic Chemical Vapor Deposition Y. Tsuchiya, H. Fujita, H. Mizuta, H. Nohira, T. Hattori and S. Oda 46th Electronic Materials Conference, Notre Dame (June 2004)

Nanoscale Observation of Size and Potential for Charged Nanocrystalline Si Dots using KFM M. A. Salem, Y. Tsuchiya, K. Usami, H. Mizuta and S. Oda 16th Internatioinal Vacuum Congress, Venice (June 2004)

AFM current imaging for surface oxidized nanocrystalline silicon dot M. A. Salem, H. Mizuta, S. Oda, Y. Fu, and M. Willander International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, Niigata (June 2004)

High-speed and nonvolatile nano electromechanical memory incorporating Si quantum dots Y. Tsuchiya, K. Takai, N. Momo, S. Yamaguchi, T. Shimada, H. Mizuta and S. Oda 27th International Conference on Physics of Semiconductors, Flagstaff (July 2004)

Observation of coherent states in coupled nanocrystalline Si double dots at 4.2K M. Khalafalla, H. Mizuta, Z. A. K. Durrani, H. Ahmed and S. Oda 27th International Conference on Physics of Semiconductors, Flagstaff (July 2004)


   Domestic Conferences

  MOCVD法によるPrシリケート膜の作製と特性評価 土屋良重、
藤田啓嗣、
野平博司、
服部健雄、
水田博、
小田俊理
薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「極薄シリコン酸化膜の形成・評価・信頼性」;
熱川(January 2004)
  MOCVD法によるPrシリケート膜の作製及び特性評価 藤田啓嗣、
土屋良重、
野平博司、
服部健雄、
水田博、
小田俊理
第51回応用物理学関係連合講演会;
八王子(March 2004)
  NEMSメモリデバイスの実現に向けた機械的特性の検討 高居康介、
山口伸也、
土屋良重、
嶋田壽一、
水田博、
小田俊理
第51回応用物理学関係連合講演会;
八王子(March 2004)
  Charge Storage in Nitrided nc.-Si Dots, Promising Memory Nodes for Nonvolatile Memory Application S. Huang,
K. Usami,
Y. Tsuchiya,
H. Mizuta and
S. Oda
第51回応用物理学関係連合講演会;
八王子(March 2004)
  Interdot coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistors M. Khalafalla,
H. Mizuta,
Z. A. K. Durrani,
H. Ahmed and
S. Oda
第51回応用物理学関係連合講演会;
八王子(March 2004)

Silicon Quantum Dot Based Nonvolatile Memory Devices S. Huang and
S. Oda
第66回半導体集積回路技術シンポジウム;
東京(June 2004)

3次元フォトニック結晶構造Si量子ドットレーザの提案 筆宝大平、
水田博、
小田俊理
第65回応用物理学会学術講演会;
仙台(September 2003)

第一原理計算(SIESTA)を用いたナノ結晶Si量子ドットの電子状態解析 東島 賢,
黒川 康良,
土屋 良重,
岡本 政邦,
水田 博,
小田 俊理
第65回応用物理学会学術講演会;
仙台(September 2003)

第一原理シミュレーションによるシリコンナノロッドの電子状態解析 黒川康良,
東島賢 ,
土屋良重,
岡本政邦,
水田博,
小田俊理
第65回応用物理学会学術講演会;
仙台(September 2003)

分散溶媒を用いたナノ結晶シリコンドットの配列制御 田中敦之,
土屋良重,
宇佐美浩一,
水田博,
小田俊理
第65回応用物理学会学術講演会;
仙台(September 2003)

NEMSメモリデバイスにおけるスイッチング動作解析 永見佑,
百々信幸,
土屋良重,
斎藤慎一,
新井唯,
嶋田壽一,
水田博,
小田俊理
第65回応用物理学会学術講演会;
仙台(September 2003)

Kelvin probe force microscopy study of charging nanocrystalline silicon dots M. A. Salem,
H. Mizuta and
S. Oda
第65回応用物理学会学術講演会;
仙台(September 2003)

 
   Books

  表面加工 小田俊理、
土屋良重
化学便覧 基礎編 (日本化学会編、丸善), 767-768(2004)
Single-electron logic based on3 multiple-tunnel junctions S. Amakawa,
K. Tsukagoshi,
K. Nakazato,
H. Mizuta and
B. W. Alphenaar
Mesoscopic Tunneling Devices(2004)

Electron transport in nanocrystalline silicon Z.A.K. Durrani, T. Kamiya and H. Mizuta Recent Res. Devel. Applied Phys. 7, 105-124,
Transworld Research Network, India (2004)

単一電子デバイス 神谷利夫、
天川修平、
水田博
実験化学講座28巻ナノテクノロジーの化学, 丸善出版(印刷中)


2003
  


   Journal Papers

New Insights in High-Energy Electron Emission and
Underlying Transport Physics of Nanocrystalline Si
S. Uno,
K. Nakazato,
S. Yamaguchi,
A. Kojima,
N. Koshida and
H. Mizuta,
IEEE Transactions on Nanotechnology;
2
(4)301-307(2003)
Switching of Single-Electron Oscillations in Dual-Gated Nanocrystalline Silicon Point-Contact Transistors M. A. H. Khalafalla,
H.Mizuta and
Z. A. K. Durrani
IEEE Transactions on Nanotechnology;
2
(4)271-276(2003)
Conducting-tip Atomic Force Microscopy for Injection and Probing of Localized Charges in Silicon Nanocrystals S. Banerjee,
M. A. Salem and
S. Oda
Applied Physics Letters;
83(18)3788-3790 (2003)
A narrow-channel few-electron-memory with nanocrystalline Si dots as floating gate:Evidencee of electron trapping and emission S. Banerjee,
S. Y. Huang and
S. Oda
IEEE Transactions on Nanotechnology;
2
(2)88-92(2003)

Observation of Quantum Confinement Effect in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices S. Huang,
S. Banerjee and
S.Oda
Materials Research Society Symposium Proceedings;
737
F11.3.1-F11.3.6(2003)

Evaluation of quantum confinement energy in nanocrystaline silicon dots from high-frequency conductance measurement S. Huang,
S. Banerjee,
R.T. Tung and
S.Oda
Applied Physics Letters;
94(11)7261-7265 (2003)
NeoSilicon materials and silicon nanodevices S. Oda Materials Science and Engineering B;
101,19-23(2003)
Photoluminescence of Surface Nitrided Nanocrystalline Silicon Dots K. Arai and
S. Oda
Physica Status Solidi(c);
0 (4)1254-1257(2003)
Electron Trapping, Storing and Emission in nanocrystalline Si dots by Capacitance-Voltage Measurements S. Huang,
S. Banerjee,
R.T. Tung and
S.Oda
Journal of Applied Physics;
93(1)576-581(2003)
Pulsed Source MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry Y. Tsuchiya,
M. Endo,
M. Kurosawa,
R.T.Tung,
T. Hattori and
S. Oda
Japanese Journal of Applied Physics;
42 (4B)1957-1961(2003)


   International Conferences


Towards Long-Term Retention-Time Single-Electron-Memory Based on Nitrided Nanocrystalline Silicon Dots S. Huang,
K. Arai,
K. Usami and
S. Oda
Silicon Nanoelectrinics Workshop, Kyoto(June 2003)

Fabrication and Device Application of Nanocrystalline Silicon Particles S. Oda Gas Phase Cluster Assembling of Nanostructured Materials, Erice-Sicily(July 2003)

Nanocrystalline silicon dots displacement using tapping-mode atomic force microscopy S. Kanjanachuchai,
Y. Tsuchiya,
K. Usami and
S. Oda
Micro and Nano Engineering, Cambridge(September 2003)

Silicon Nanodevices and NeoSilicon S. Oda International Conference on Materials for Advanced Technologies, Singapore(December 2003)

Nanocrystalline Silicon Quantum Dot Devices S. Oda 6th Sweden-Japan QNANO Workshop, Stockholm(December 2003)

Pulsed-source MOCVD HfO2 ultrathin film growth optimized by in situ ellipsometry monitoring Y. Tsuchiya,
M. Endo and
S. Oda
Solid State Devices and Materials Conference, Extended Abstracts(2003)



   Domestic Conferences


Localized charge injection in nanocrystalline silicon dot using an atomic force microscope tip S. Banerjee,
S. Y. Huang,
Y. Tsuchiya,
K. Usami and
S. Oda
第50回応用物理学関係連合講演会;
横浜(March 2003)
  Investigation of nc-Si Quantum Dot Based p/n Channel Few-Electron Devices S. Y. Huang,
S. Banerjee,
Y. Tsuchiya,
K. Usami and
S. Oda
第50回応用物理学関係連合講演会;
横浜(March 2003)
  HfO2薄膜のMOCVD成長初期のエリプソメトリによるその場観察 遠藤真人、
鄭仰東、
土屋良重、
小田俊理
第50回応用物理学関係連合講演会;
横浜(March 2003)
  液相分散系を用いたナノクリスタルシリコンの配列技術 岩佐達也、
土屋良重、
宇佐美浩一、
小田俊理
第50回応用物理学関係連合講演会;
横浜(March 2003)

パルス供給MOCVD法によるPrOxの作製と特性評価 黒澤正敏、
吉岡健一、
土屋良重、
服部健雄、
小田俊理
第50回応用物理学関係連合講演会;
横浜(March 2003)

ナノクリスタルシリコン平面型電子源の電子エネルギー分布 中務琢也、
中村暦、
土屋良重、
宇佐美浩一、
小田俊理、
小島明、
越田信義
第50回応用物理学関係連合講演会;
横浜(March 2003)

Estimation of charge injected in a single Si dot using AFM M. A. Salem,
S. Banerjee and
S. Oda
第64回応用物理学会学術講演会;
福岡(September 2003)

分光エリプソメトリによるHFO2薄幕のパルス供給MOCVD成長過程の観察とモデリング 鄭仰東、
土屋良重、
佐藤大典、
小田俊理
第64回応用物理学会学術講演会;
福岡(September 2003)

ナノ結晶シリコン粒径縮小化に向けたパルスガスプラズマプロセスの制御 中務琢也、
池澤健太、
田中敦之、
宇佐美浩一、
土屋良重、
小田俊理
第64回応用物理学会学術講演会;
福岡(September 2003)

ナノ結晶シリコンドットを用いたNEMSメモリデバイスの提案 高居康介、
山口伸也、
土屋良重、
嶋田壽一、
小田俊理
第64回応用物理学会学術講演会;
福岡(September 2003)

Long-term retention-time memory devices using dual memory nodes: nanocrystalline-silicon and silicon nitride S. Huang,
K. Arai,
K. Usami, Y.Tsuchiya and
S. Oda
第64回応用物理学会学術講演会;
福岡(September 2003)


2002

   Journal Papers


No-phonon assisted recombination of surface oxidized nanocrystalline silicon dots K. Arai,
J. Omachi and
S. Oda
Japanese Journal of Applied Physics; (2002)

A narrow-channel few-electron-memory with nanocrystalline Si dots as floating gate:Evidencee of electron trapping and emission S. Banerjee,
S. Y. Huang and
S. Oda
IEEE Transactions on Nanotechnology(2002)

Observation of the Quasi-Direct Recombination in Nanocrystalline Silicon Dots by Reducing the Core Diameter K. Arai,
J. Omachi and
S. Oda
Electrochemical Society;
PV 2002-9,109-122 (2002)

Single Electron and Ballistic Transport in Silicon Nano Devices4 S. Oda Electrochemical Society (2002)

C-V and G-V measurements showing single electron trapping in nanocrystalline silicon dot embedded in MOS memory structure S. Y. Huang,
S. Banerjee and
S. Oda
Materials Research Society Symposium Proceedings;
686A8.8.1-8.6(2002)
Nanocrystalline silicon electron emitter with a high efficiency enhanced by a planarization technique K. Nishiguchi,
X. Zhao and
S. Oda
Journal of Applied Physics;
92(5)2748-27572002)
Ballistic transport in silicon vertical transistors K. Nishiguchi and
S. Oda
Journal of Applied Physics;
92(3)1399-1405(2002)
Evidence of storing and erasing of electrons in nanocrystalline-Si based memory device at 77K S. Banerjee,
S. Y. Huang,
T. Yamanaka and
S. Oda
Journal of Vacuum Science and Technology;
B20(3)1135-1138(2002)
Observation of single electron trapping, storing and emission by C-V and G-V measurement S. Y. Huang,
S. Banerjee and
S. Oda
Materials Research Society Symposium Proceedings;
686(2002)
Temperature and frequency dependencies of charging and discharging properties in MOS memory based on nanocrystalline silicon dot S. Y. Huang,
S. Banerjee and
S. Oda
Materials Research Society Symposium Proceedings;
715A12.5.1-5.6(2002)

 

   International Conferences


NeoSilicon: Silicon quantum dots with controlled interparticle distance S. Oda International Workshop on Quantum Dots for Quantum Computing;
Kouchi, paper 7(January 2002)
  Temperature and frequency dependencies of charging and discharging properties in MOS memory based on nanocrystalline silicon dot S. Y. Huang,
S. Banerjee and
S. Oda
Materials Research Society Symposium Proceedings;
San Francisco, A12.5(April 2002)
Manifestation of the Quasi-Direct Recombination in Nanocrystalline Silicon Dots by Reducing the Core Diameter K. Arai,
J. Omachi and
S. Oda
Electrochemical Society;
Philadelphia,PV 2002-9(May 2002)
NeoSilicon material and silicon nanodevices(invited) S. Oda E-MRS Spring Meeting;
Strasbourg,S-III.1(June 2002)
Operation of a narrow channel memory device with a few Si quantum dots in the active region S. Banerjee,
S. Y. Huang and
S. Oda
E-MRS Spring Meeting;
Strasbourg,S/PII.03(June 2002)
Evidence of Electron Trapping and Emission in Nanocrystalline-Si Based Memory Devices S. Banerjee,
S. Y. Huang and
S. Oda
Silicon Nanoelectrinics Workshop;
Honolulu,9-6(June 2002)

Photoluminescence of Surface Nitrided Nanocrystalline Silicon Dots K. Arai and
S. Oda
2nd International Conference on Semiconductor Quantum Dots;
Tokyo,K-29(September 2002)

Single Electron and Ballistic Transport in Silicon Devices(invited) S. Oda ECS International Semiconductor Technology Conference;
Tokyo,Abs#44(September 2002)

Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry Y. Tsuchiya,
M. Endo,
M. Kurosawa,
R.T. Tung,
T. Hattori and
S. Oda
Solid State Devices and Materials Conference, Extended Abstracts;
Nagoya,P4-3(September 2002)

Observation of Quantum Confinement Effect in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices S. Y. Huang,
S. Banerjee and
S. Oda
MRS Fall Meeting;
Boston, F11.3(December 2002)

High efficiency electron/photon emission from silicon quantum dots(invited) S. Oda 5th Sweden-Japan QNANO Workshop; Yokohama (December 2002)

  

   Domestic Conferences


Electron storing and emission in nanocrystalline Si-based memory device at 77K S. Banerjee,
S. Y. Huang and
S. Oda
第49回応用物理学関係連合講演会;
平塚 28p-K-6,(March 2002)
  Investigation of frequency and temperature dependence of C-V and G-V characteristics in SiO2/nc-Si/SiO2sandwich structure S. Y. Huang,
S. Banerjee and
S. Oda
第49回応用物理学関係連合講演会;
平塚 28p-K-4,(March 2002)
  分光エリプソメトリによる高誘電率ゲート酸化膜成長のその場観察(2) 遠藤真人、
黒澤正敏、
H. Sauddin、
平野貴裕、
服部健雄、
土屋良重、
小田俊理
第49回応用物理学関係連合講演会;
平塚 30p-A-3,(March 2002)
  MOCVD法によるPr酸化物の作製と評価 黒澤正敏、
平野貴裕、
遠藤真人、
H. Sauddin、
土屋良重、
服部健雄、
小田俊理
第49回応用物理学関係連合講演会;
平塚 30p-A-5,(March 2002)

表面酸化シリコン量子ドットのPL特性の粒径依存性 新井健太、
小田俊理
第49回応用物理学関係連合講演会;
平塚 29a-YG-3,(March 2002)

ナノクリスタルシリコン平面型ホットエレクトロン放出素子の特性向上 西口克彦、
趙新為、
小田俊理
第49回応用物理学関係連合講演会;
平塚 28a-K-8,(March 2002)

ナノシリコン量子ドットの作製とデバイス特性(invited) 小田俊理 日本セラミックス協会講演会;
つくば(August 2002)

Analysis of electron spacing in nanocrystalline silicon dots by C-V and G-V method S. Y. Huang,
S. Banerjee and
S. Oda
第63回応用物理学会学術講演会;
新潟 25a-F-2(September 2002)

分光エリプソエメトリによるHfO2による薄膜の原子層MOCVD成長その場観察 遠藤真人、
黒澤正敏、
土屋良重、
服部健雄、
R.T.Tung、
小田俊理
第63回応用物理学会学術講演会;
新潟 25a-C-2(September 2002)

セルフアライン金属・半導体ダブルドット単電子素子の作製と評価 小澤治、
高居康介、
星出祐亮、
土屋良重、
小田俊理
第63回応用物理学会学術講演会;
新潟 25a-F-2(September 2002)

表面酸化シリコン量子ドットのPL特性の窒化による変化 新井健太、
森智彦、
小田俊理
第63回応用物理学会学術講演会;
新潟 25a-ZD-3September 2002)



   Books


MOCVD for Thin Film Growth S.Oda Vortex Electronics and SQUIDs, Springer-Verlag(2002)

MOCVD:酸化物超伝導体 小田俊理 応用物理ハンドブック(丸善)(2002)

ナノ構造の作製とその物性:ゼロ次元ナノ構造:超微粒子 小田俊理 ナノテクノロジーハンドブックI編「創る」(オーム社)(2002)


   Others


  Observation of Electron Trapping, Storage and Emission in Nanocrystalline Si Dots by C-V and G-V Measurements S. Y.Huang,
S. Banerjee and
S. Oda
FEMD Newsletter;
3(4)6-7(2002)
  TEM and PL Studies of Self-Limiting Oxidation of Nanocrystalline Si Dots K. Arai,
J. Omachi and
S. Oda
FEMD-CREST News Letter(2002)


2001

    Journal Papers

Atomic Layer-by-Layer MOCVD of Complex Metal Oxides and Related Growth Technologies S. Yamamoto and
S. Oda
Chemical Vapor Deposition;
7
(1)7-18(2001)
A self-aligned two-gate single-electron transistor derived from 0.12μm lithography K. Nishiguchi and
S. Oda
Applied Physics Letters;
78
(14)2070-2072(2001)
  Charge Storage Mechanism in Nano-Crystalline Si Based Single Electron Memories B. J. Hinds,
T. Yamanaka and
S. Oda
Materials Research Society Symposium Proceedings;
638F2.2 1-6(2001)
  Retardation in the oxidation rate of nanocrystalline silicon quantum dots J. Omachi,
R. Nakamura,
K. Nishiguchi and
S. Oda
Materials Research Society Symposium Proceedings;
638F5.3 1-6(2001)
  Fabrication and characterization of cold electron emitter based on nanocrystalline silicon quantum dots K. Nishiguchi,
X. Zhao and
S. Oda
Materials Research Society Symposium Proceedings;
638F5.9 1-5(2001)
Photoluminescence study of the self-limiting oxidation in nanocrystalline silicon quantum dots K. Arai,
J. Omachi,
K. Nishiguchi and
S. Oda
Materials Research Society Symposium Proceedings;
664A20.6 1-6(2001)
  21世紀の単電子デバイス 小田俊理 電気学会論文誌C;
121-C 19-22(1)(2001)
  Fabrication and characterization of nanocrystalline silicon electron emitter K. Nishiguchi,
X. Zhao and
S. Oda
Proceedings of the 25th International Conference on the Physics of Semiconductors (Springer);1749-1750
  Ballistic transport under magnetic field in silicon vertical transistors K. Nishiguchi and
S. Oda
Proceedings of the 25th International Conference on the Physics of Semiconductors (Springer);1037-1038
  Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition S. Oda and
K. Nishiguchi
Journal de Physique IV;
Vol. 11(Pr.3)1065-1071(2001)
  Emission Lifetime of Polarizable Charge Stored in Nano-Crystalline Si Based Single Electron Memory B. J. Hinds,
T. Yamanaka and
S. Oda
Journal of Applied Physics;
90(12)6402-6408(2001)

  

   International Conferences

     Photoluminescence study of the self-limiting oxidation in nanocrystalline silicon quantum dots K. Arai,
J. Omachi,
K. Nishiguchi and
S. Oda
MRS Spring Meeting;
SanFrancisco, (April 2001)
         Single electron and ballistic transport in silicon nanostructures (invited) S. Oda Sweden-Japanese Workshop on Quantum Nanostructure Devices;
Stockholm, (June 2001)
  In situ ellipsometry of undoped and Ga-doped YBa2Cu3O7-d films by MOCVD S. Oda,
S. Sugai and
Y. Matsukawa
International Superconductivity Electronics Conference;
Osaka TM-7, (June 2001)
  Ballistic transport under magnetic field in a silicon vertical structure device K. Nishiguchi and
S. Oda
Silicon Nanoelectrinics Workshop;
Kyoto, (June 2001)
Enhancement of Electron Emission Characteristics from Nanocrystalline Silicon by Planarization Technique K. Nishiguchi,
X. Zhao and
S. Oda
Device Research Conference;
Notre Dame VI-B-6(June 2001)

NeoSilicon materials (invited) S. Oda Ninth Hitachi-Cambridge Seminar;
Cambridge, (July 2001)
Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition(invited) S. Oda EUROCVD-13;
Athens, (August 2001)
  Single electron and ballistic transport in silicon nanoscale devices (invited) S. Oda FSRC Science and Technology of Silicon MAterials;
La Jolla, (August 2001)

Fabrication and device application of silicon nanostructures(invited) S. Oda AIST International Symposium on Nanotechnology;
Tokyo,(November 2001)
C-V and G-V measurements showing single electron trapping in nanocrystalline silicon dot embedded in MOS memory structure S. Y. Huang,
S. Banerjee and
S. Oda
MRS Fall Meeting;
Boston,(November 2001)

Nanocrystalline silicon quantum dots: fabrication, characterization and application(invited) S. Oda Yamada Conference LVII on "Atomic-scale surface designing for functional low-dimensional materials";
Tsukuba,(November 2001)



   Domestic Conferences

  シリコンナノデバイスとネオシリコン (invited) 小田俊理 シリコンテクノロジー分科会第27回研究集会; 東京, (March 2001)
  Quantum Confinement Polarization Model for Lifwtime of Discrete Charge Stored in Single Nano-crystalline Si Dot Floating-Gate Memory B. J. Hinds,
T.Yamanaka
S.Huang,
R.Nakamura,
S.Oda
第48回応用物理学関係連合講演会;
東京 28p-ZN-6, (March 2001)
  原子レベルで制御する高誘電率ゲート酸化膜のMOCVD成長と分光エリプソメトリ観察 松川康成、
黒澤正敏、
伊藤誠吾、
服部健雄、
小田俊理
第48回応用物理学関係連合講演会;
東京 31a-YF-9, (March 2001)
  ナノクリスタルシリコン平面型電子放出素子の最適化 西口克彦、
趙新為、
小田俊理
第48回応用物理学関係連合講演会;
東京 31p-ZA-3, (March 2001)
  Si量子ドットのストレス誘起酸化抑制(I):TEM観察 大町純一、
西口克彦、
新井健太、
小田俊理
第48回応用物理学関係連合講演会;
東京 28p-ZN-15, (March 2001)

Si量子ドットのストレス誘起酸化抑制(II):PL評価 新井健太、
大町純一、
西口克彦、
小田俊理
第48回応用物理学関係連合講演会;
東京 28p-ZN-16, (March 2001)


   Books


Electron transport in silicon nanodevices S. Oda APPC 2000, Eds by Y. D. Yao et al (World Scientific, Singapore, 2001)
67-72
Ballistic transport under magnetic field in silicon vertical transistors K. Nishiguchi and
S. Oda
Proceedings of the 25th International Conference on the Physics of Semiconductors,Eds by N. Miura and T. Ando
(Springer, Berlin, 2001)
1037-1038
Fabrication and characterization of nanocrystalline silicon electron emitter K. Nishiguchi,
X. Zhao and
S. Oda
Proceedings of the 25th International Conference on the Physics of Semiconductors, Eds by N. Miura and T. Ando
(Springer, Berlin, 2001)
1749-1750


   Others

   結晶成長モニターによるMOCVD薄膜形成技術の精密制御 S.Oda,
Y.Matsukawa,
K.Shimosato,
M.Kurosawa and
S.Ito
12年度特定領域研究「ボルテックス・エレクトロニクス」研究会;
東京,(Jan.2001)


2000


   Journal Papers

Conductance quantization in nanoscale vertical-structure silicon field-effect transistors with a wrap gate K. Nishiguchi and
S. Oda
Applied Physics Letters;
76(20) 2922-2924 (2000)
  ULSI技術は電気化学の時代 (invited) 小田俊理 Electrochemistry;
68
(10)763 (2000)
HTML
21世紀への道 電子材料-ナノシリコンとネオシリコン (invited) 小田俊理 Electrochemistry;
68(12) 294-296 (2000)
  An era of reform for the New Century S. Oda FED Journal;
11 3 (2000)
Single Electron Memory Devices Based on Plasma  Derived Silicon Nanocrystals A. Dutta,
Y. Hayafune and
S.Oda
Japanese Journal of Applied Physics;
39(8B) L855-L857 (2000)
Room temperature single-electron narrow channel memory with silicon nanodots embedded in SiO2 matrix F. Yun,
B. J. Hinds,
S. Hatatani and
S. Oda
Japanese Journal of Applied Physics;
39(8A) L792-L795  (2000)
Stabilization of Oxygen Diffusion in Ga-doped YBa2Cu3O7-σ Thin Films Observed by Spectroscopic Ellipsometry S.Sugai,
Y.Matsukawa, K.Shimosato and
S.Oda
Japanese Journal of Applied Physics;
39 (10B) L1032-L1034(2000)
Electron Transport in Nanocrystalline-Si Based single Electron Transistors A. Dutta,
S. Oda,
Y. Fu and
M. Willander
Japanese Journal of Applied Physics;
39(7B) 4647-4650 (2000)
Two-Gate Transistor for the Study of Si/SiO2 Interface in SOI Nano-Channel and Nanocrystalline Si memory Device B. J. Hinds,
K. Nishiguchi,
A. Dutta,
T. Yamanaka,
S. Hatatani and
S. Oda
Japanese Journal of Applied Physics;
39(7B) 4637-4641 (2000)
Structure analysis of SrTiO3/BaTiO3 strained superlattice films prepared by atomic-layer metalorganic chemical vapor deposition Z. Wang,
S. Oda,
M. Karlsteen,
U. Sodervall and
M. Willander
Japanese Journal of Applied Physics;
39(7A) 4164-4167 (2000)
Single Electron Tunneling Devices Based on Silicon Quantum Dots Fabricated by Plasma Process ; A. Dutta,
S. P. Lee,
Y. Hayafune,
S. Hatatani and
S. Oda
Japanese Journal of Applied Physics;
39(1) 264-267(2000)
Electron transport in a single silicon quantum structure using a vertical silicon probe K. Nishiguchi and
S. Oda
Journal of Applied Physics;
88
(7) 4186-4190 (2000)
Electrical properties of SrTiO3/BaTiO3 strained superlattice films prepared by atomic-layer metalorganic chemical vapor deposition Z. Wang and
S. Oda
Journal of Electrochemical Society;
147 (12) 4615-4617 (2000)
Electron-Beam Direct-Writing using RD2000N for Fabrication of Nano-Devices A. Dutta,
S. P. Lee,
Y. Hayafune and
S. Oda
Journal of Vacuum Science and Technology;
18(6) 2857-2861 (2000)
  Preparation of Nanocrystalline Silicon Quantum Dots by Pulsed Plasma Processes with High Deposition Rates K. Nishiguchi,
S. Hara,
T. Amano,
S. Hatatani and
S. Oda
Materials Research Society Symposium Proceedings;
571
43-48(2000)
Carrier conduction in Si-nanocrystal-based single electron transistor-I.. Effect of a gate bias Y. Fu,
M. Willander,
A. Dutta and
S. Oda
Superlattices and Microstructures;
28 (3) 177-187 (2000)
Carrier conduction in Si-nanocrystal-based single electron transistor-I.I. Effect of a drain bias Y. Fu,
M. Willander,
A. Dutta and
S. Oda
Superlattices and Microstructures;
28 (3) 189-198 (2000)
Study of Structural and Optical Properties of Nanocrystalline Silicon Embedded in SiO2 F. Yun,
B. J. Hinds,
S. Hatatani,
S. Oda,
Q. X. Zhao and
M. Willander
Thin Solid Films;
375(1-2) 137-141 (2000)


   International Conferences

Single electron memory utilizing nano-crystalline Si over short channel silicon-on-insulator transistors B. J. Hinds,
A. Dutta,
F. Yun,
T. Yamanaka,
S. Hatatani and
S. Oda
Device Research Conference
151-152;
Denver VII.A.-1, (June 2000)
Electron transport in a single silicon quantum dot structure using a vertical silicon probe K. Nishiguchi and
S. Oda
Device Research Conference
79-80;
Denver III.-17, (June 2000)
  Si Quantum Dot Devices and NeoSilicon (invited) S. Oda JRCAT Workshop "Impact of Nanotechnology on Si Technology";
Tsukuba, (June 2000)
Lifetime measurements of electrons stored nano-crystalline Si single electron memory devices B. J. Hinds,
A. Dutta,
T. Yamanaka,
S. Hatatani and
S. Oda
Silicon Nanoelectrics Workshop 75-76;
Honolulu 6-5, (June 2000 )
Ballistic transport in a silicon vertical transistor K. Nishiguchi and
S. Oda
Silicon Nanoelectrics Workshop 32-33;
Honolulu 3-2, (June 2000)
  Single-Electron Transistors with Two Self-Aligned Gates K.Nishiguchi and
S. Oda
Solid State Devices and Materials Conference Extended Abstracts 116-117;
Sendai D-2-3, (August 2000)
Electron Transport in Silicon Nanodevices (invited) S.Oda The 8th Asia Pacific Physics Conference 49-50;
Taipei BA-9, (August 2000)
Fabrication and characterization of nanocrystalline silicon electron emitter K.Nishiguchi,
X. Zhao and
S.Oda
International Conference on Physics of Semiconductors 280;
Osaka D268, (September 2000)
Ballistic transport under magnetic field in silicon vertical transistors K.Nishiguchi and
S.Oda
International Conference on Physics of Semiconductors 512;
Osaka H512, (September 2000)
Nano-Crystalline Si as Floating Gate Node for Single Electron Memory Devices B. J. Hinds,
A.Dutta,
T.Yamanaka,
S.Hatatani and
S.Oda
International Symposium on Formation, Physics and Device Application of Quantum Dot Structres 114;
Sapporo Tu2-2, (September 2000)
   Single Electron Tunneling and Ballistic Transport in Silicon Nanodevices S.Oda,
A.Dutta,
K.Nishiguchi,
B.J.Hinds,
X. Zhao and
S.Hatatani
International Symposium on Formation, Physics and Device Application of Quantum Dot Structres 8;
Sapporo Mo2-4, (September 2000)
   Ballistic transport in silicon vertical transistors(invited)  K.Nishiguchi and
S.Oda
4th International Workshop on Quantum Functional Devices;
Kanazawa, (November2000)
   Silicon Nanodevices and Neosilicon S.Oda 10th Seoul International Symposium on the Physics of Semiconductor and Applications-2000 60;
Cheju B3, (November 2000)
Charge Storage Mechanism in Nano-crystalline Si based Single-electron Memories B.J.Hinds,
T.Yamanaka,
S.Hatatani and
S.Oda
Materials Research Society 110;
Boston F2.2, (November 2000)
    Retardation in the Oxidation rate of Nanocrystalline Silicon Quantum  Dots J.Omachi,
R.Nakamura, K.Nishiguchi and
S.Oda
Materials Research Society  112;
Boston F5.3, (November 2000)
Fabrication and Characterization of Cold Electron Emitter based on Nanocrystalline Silicon Quantum Dots K.Nishiguchi,
X.Zhao and
S.Oda
Materials Research Society 113;
Boston F5.9, (November 2000)




   Domestic Conferences

  シリコンナノデバイスとネオシリコン (invited) 小田俊理 異分野研究者交流フォーラム 69 ; 大仁 (March 2000)
シリコン縦型トランジスタによるバリスティック伝導の観測 西口克彦、
小田俊理
第47回応用物理学関係連合講演会 975 ;
東京 29p-C-6(March 2000)
Single electron memory from nano-crystalline Si dots fromed by the disproportiation reaction of silicon suboxide Y. Feng,
B. J. Hinds,
A. Dutta,
S. Hatatani and
S. Oda
第47回応用物理学関連連合講演会 976;
東京 29-p-C-10 (March 2000)
Lifetime Analysis of Single Electron Memory from Nano-crystalline Si Dots Floating-Gate over Nano-Scale Channel Transistor B.J.Hinds,
T.Yamanaka,
S.Hatatani, and
S.Oda
第61回応用物理学会学術講演会 840;
札幌 4p-R-7(September 2000)
  シリコン量子ドットを用いた短チャネルスイッチング素子の提案 吉田征一郎、
西口克彦、
小田俊理
第61回応用物理学会学術講演会 659;
札幌 6p-ZB-6 (September 2000)
  ナノ結晶シリコンを用いたナノチャネル単電子メモリの作製 山中崇行、
B.J.ハインズ、
畑谷成郎、
小田俊理
第61回応用物理学会学術講演会 839;
札幌 4a-R-7 (September 2000)
  分光エリプソメトリによるMOCVD成長YBCO薄膜のその場観察(III 松川康成、
下里圭司、
服部健雄、
小田俊理
第61回応用物理学会学術講演会 190;
札幌4a-ZK-15 (September 2000)
セルフアライン・ダブルゲート単電子トランジスタの作製 西口克彦、
小田俊理
第61回応用物理学会学術講演会 837;
札幌 4a-R-7(September 2000)
ナノクリスタルシリコンを用いた平面型電子放出素子の作製 西口克彦、
趙新為、
小田俊理
第61回応用物理学会学術講演会 659;
札幌 6p-ZB-6 (September 2000)

 
   Others

   結晶成長モニターによるMOCVD薄膜形成技術の精密制御 S.Oda,
S.Sugai,
Y.Matsukawa and
K.Shimosato
11年度特定領域研究「ボルテックス・エレクトロニクス」研究会;
東京,(Jan.2000)


1999

   Journal Papers

Silicon Based Single Electron Memory Using Multi-Tunnel Junction Fabricated by Electorn Beam Direct Writing A. Dutta,
S. P. Lee,
S. Hatatani and
S. Oda
Applied Physics Letters
75
 (10) L1422-L1424 (1999)
In situ growth monitoring during metalorganic chemical vapor deposition of YBa2Cu3Ox thinfilms by spectroscopic ellipsometry S.Yamamoto,
S. Sugai,
Y. Matsukawa,
A. Sengoku,
H. Tobisaka,
T. Hattori and
S.Oda
Japanese Journal of Applied Physics
38(6A/B) L632-L634(1999)
Reproducible Growth of Metalorganic Chemical Vapor Deposition Derived YBa2Cu3Ox Thinfilms Using Ultrasonic Gas Concentration Analyzer S. Yamamoto,
K. Nagata,
S. Sugai,
A. Sengoku,
Y. Matsukawa,
T. Hattori and
S. Oda
Japanese Journal of Applied Physics;
38(8) L4727-L4732 (1999)
Enhanced Dielectric Properties in SrTiO3/BaTiO3 Strained Superlattice Structures Prepared by Atomic-Layer Metalorganic Chemical Vapor Deposition Z. Wang,
T. Yasuda,
S. Hatatani and
S. Oda
Japanese Journal of Applied Physics;
38 (12A) L6817-L6820 (1999)
  In situ process monitoring of MOCVD of superconducting and dielectric oxide thinfilms S.Yamamoto,
S.Sugai and
S.Oda
Journal de Physique IV; 
9,Pr8-1013-1(1999)
  Nanostructured materials and devices for sensor and electronic applications (invited) D.F.Moore,
W.I.Milne and
S.Oda
Power Engineering Journal;
13; 89-93; (1999)



   International Conferences


  Atomic-layer MOCVD of SrTiO3/BaTiO3 superlattice structures for high-εdielectrics Z.Wang,
T.Yasuda,
S.Hatatani and
S.Oda
International Symposium on Future of Intellectual Integrated Electronics ; 163-167;
Sendai; (1999)
Preparation of nanocrystalline silicon quantum dots by pulsed plasma processed with high deposition rates K.Nishiguchi,
S.Hara,
T.Amano,
S.Hatatani and
S.Oda
Materials Research Society 99 Spring meeting;
San Francisco; (1999)
  Study of optical properties related to the passivation of nanocrystalline silicon and SiO2 interfacial defect states F.Yun,
B.J.Hinds,
S.Hatatani,
S.Oda,
Q.X.Zhao and
M.Willander
IUMRS-ICAM'99 Symposium F: Thin Films and Multilayers;
Beijing; (1999)
  Fabrication and characterization of silicon quantum-dot memory by ultrafine silicon particles embedded in SiO2 F.Yun,
A.Dutta,
B.J.Hinds,
K.Nishiguchi, S.Hatatani,
S.Oda and
M.Willander
IUMRS-ICAM'99 Symposium M: Si-based Materials and Devices;
Beijing; (1999)
  Single electron transistor using silicon quantum dots embedded in SiO2 matrix F.Yun,
K.Nishiguchi,
A.Dutta,
B.J.Hinds,
S.Hatatani,
S.Oda and
M.Willander
IUMRS-ICAM'99 Symposium O: Low Dimensional Structures and Quantum Devices;
Beijing; (1999)
  Observation of Quantum Effects and Coulomb Blockade in Nanodevices wieh Plasma Derived Silicon Nanocrystals A.Dutta,
S.P.Lee,
Y.Hayafune,
S.Hatatani,
S.Oda and
M.Willander
Silicon Nanoelectronics Workshop;
Kyoto; (1999)
  Electronic band structures in Si nanocrystals with applications to dot-based MOSFETs Y.Fu,
M.Willander,
F.Yun and
S.Oda
Silicon Nanoelectronics Workshop;
Kyoto; (1999)
  Electrical characterization of Si-based single electron memory cell with multiple tunnel junctions A.Dutta,
S.P.Lee and
S.Oda
9th Int. Conf. Modulated Semiconductor Structures;
Fukuoka; (1999)
  In-situ process monitoring of MOCVD of superconducting and dielectric oxide thinfilms S.Oda,
S.Yamamoto and
S.Sugai
Euro CVD 12;
Barcelona; (1999)
   Electrical properties of SrTiO3/BaTiO3 strained superlattices formed by atomic-layer MOCVD Z.Wang,
T.Yasuda,
S.Hatatani and
S.Oda
Electrochemical Society;
Honolulu;(1999)


   Domestic Conferences


   Fabrication of Single Electron Tunneling Devices using Silicon Quantum Dots A.Dutta,
S.P.Lee,
Y.Hayafune,
S.Hatatani and
S.Oda
第46回応用物理学関係連合講演会; 544;
野田; (1999)
  ナノ結晶Siフローティングゲートを有する単電子メモリの作製と特性評価 早舩嘉典、
A.Dutta,
S.P.Lee,
畑谷成郎、
小田俊理
第46回応用物理学関係連合講演会;550;
野田; (1999)
  Electrical Characterisation of Si-based Single Electron Memory Cell with Multiple Tunnel Junctions S.P.Lee,
A.Dutta,
Y.Hayafune,
S.Hatatani and
S.Oda
第46回応用物理学関係連合講演会; 551;
野田; (1999)
  SrTiO3/BaTiO3超格子薄膜の結晶性評価およびTEM観察 王在陽、
安田智彦、
畑谷成郎、
小田俊理
第46回応用物理学関係連合講演会;559;
野田; (1999)
  分光エリプソメトリによるMOCVD成長YBCO薄膜のその場観察(・) 松川康成、
須貝聡、
仙石暁生、
山本修一郎、
服部武雄、
小田俊理
第46回応用物理学関係連合講演会;267;
野田; (1999)



    Books

    ATOMIC LAYER MOCVD OF OXIDE SUPERCONDUCTORS AND DIELECTRICS S. Oda,
S. Yamamoto,
Z. Wang,
H. Tobisaka and
K. Nagata
High-Temperature Superconductors and Novel Inorganic Materials, NATO ASI Series 3 vol. 62 (eds. by G. Van Tendeloo, E.V. Antipov and S.N. Putilin, Kluwer Academic, Dordorecht); 75-78; (1999)


 
 

 
   Others

   Realtime process monitoring inMOCVD of oxide superconducting films S.Oda,
S.Yamamoto,
S.Sugai,
Y.Matsukawa and
A.Sengoku
10年度特定領域研究「ボルテックス・エレクトロニクス」第2回全体会議;
東京; (1999)
     プラズマCVDシリコン量子ドットの粒径制御と単電子輸送特性 S.Oda,
A.Dutta,
S.Hara,
Y.Hayafune,
S.P.Lee,
K.Nishiguchi,
B.J.Hinds and
S.Hatatani
平成10年度特定領域研究報告会;
東京; (1999)



1998


   Journal Papers


Observation of Single Electron Charging Effect in Nanocrystalline Silicon at Room Temperature Using Atomic Force Microscopy M.Otobe,
H.Yajima and
S.Oda
Applied Physics Letters;
72
; 1089-1091 (1998)
Electric Properties of Coplanar High-Tc Superconducting Field Effect Devices S.Suzuki,
H.Tobisaka and
S.Oda
Japanese Journal of Applied Physics;
37
(2); 492-495; (1998)
Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO3 Films with a Very smooth Surface Z.Wang and
S.Oda
Japanese Journal of Applied Physics;
37(3A); 942-947; (1998)
Electric Field-effect Enhancement by a Combination of Coplanar High-Tc Superconducting Devices with Step Edhe Junctions S.Suzuki,
S.Sugai and
S.Oda
Japanese Journal of Applied Physics;
37
(7A); L784-L786; (1998)
  

   International Conferences

    Fabrication of Nanodevices Using Silicon Quantum Dots A. Dutta,
Y. Hayafune,
S.P. Lee,
S. Hara,
K. Nishiguchi and
S. Oda
International Symposium on Formation, Physics and Device Application of Quantum Dot Structres;
Sapporo; (1998)
    ATOMIC LAYER MOCVD OF OXIDE SUPERCONDUCTORS AND DILECTRICS (invited) S.Oda,
S.Yamamoto,
Z.Wang,
H.Tobisaka and
K.Nagata
NATO Workshop MSU-HTSC V;
Moscow; (1998)
    Single electron tunneling in nanocrystalline silicon prepared by plasma processes (invited) S.Oda S; Sweden-Japanese Workshop;
June; (1998)
     Preparation of silicon nanostructures by plasma CVD and EB processes (invited) S.Oda FED-PDI Joint Conference on 21st Century Electron Devices;
June; (1998)
    Single electron devices based on nanocrystalline silicon (invited) S.Oda and
A.Dutta
International Workshop on Advanced LSIs-Scaled Device/Process and High Performance Circuits-;
July; (1998)  
   Nonvolatile Single Electron Memory Devices Using Multitunnel Junctions Fabricated by Direct Dlectron Beam Lithography A. Dutta,
S. P. Lee,
S. Hatatani and
S. oda
(1998)
    Single-Electron Tunneling in Nanocrystalline Silicon (invited)
 
S.Oda,
A.Dutta,
S-P.Lee,
Y.Hayafune, K.Nishiguchi,
B.J.Hinds and S.Hatatani
Solid State Devices and Materials Conference, Extended Abstracts;
September; (1998)




   Domestic Conferences

   VHF帯容量結合プラズマの特色と課題 (invited) 小田俊理 第45回応用物理学関係連合講演会;
八王子; (1998)
   シリコン量子ドット単一電子デバイス  (invited) 小田俊理、
A.Dutta
電気化学会第65回大会;
東京;(1998)
    分光エリプソメトリ−によるYBCO薄膜のその場MOCVD成長観察 松川康成、
鳶坂浩志、
須貝聡、
山本修一郎、
服部健雄、
小田俊理
第59回応用物理学会学術講演会;
広島; (September 1998)
   MOCVD法によるYBCO薄膜堆積時の原料ガス濃度モニターと制御 須貝聡、
仙石暁生、
山本修一郎、
服部健雄、
小田俊理
第59回応用物理学会学術講演会;
広島; (September 1998)
   ナノクリスタルシリコンの粒径制御と堆積速度の向上 原聡二、
西口克彦、
畑谷成郎、
小田俊理
第59回応用物理学会学術講演会;
広島; (September 1998)
   原子層MOCVD法によるBaTiO3/超格子薄膜の作製 王在陽、
安田智彦、
畑谷成郎、
小田俊理
第59回応用物理学会学術講演会;
広島;September;(1998)
   微結晶Si量子ドットフローティングゲートを有する単一電子メモリの作製 早船義典、
A. Dutta、
S. P. Lee、
西口克彦、
畑谷成郎、
小田俊理
第59回応用物理学会学術講演会;
広島;(September 1998)
   Fabrication of Single Electron Tunneling Devises using Silicon Quantum Duts A. Dutta,
S. P. Lee,
Y. Hayafune,
K. Nishiguthi,
S. Hatatani and
S. Oda
第59回応用物理学会学術講演会;
広島; (September 1998)
    Non-volatile Single Electron Memory Cell with Multiple Tunnel Junctions S. P. Lee,
A. Dutta,
Y. Hayafune,
. Nishiguchi,
T. Amano,
S. Hatatani and
S. Oda
第59回応用物理学会学術講演会; 
広島; (September 1998)


    Books

  ATOMIC LAYER MOCVD OF OXIDE SUPERCONDUCTORS AND DIELECTRICS (invited) S. Oda,
S. Yamamoto,
Z. Wang,
H. Tobisaka and
K. Nagata
NATO ASI Series; (1998)



   Others

  シリコン量子ドットの表面制御と単電子トンネル特性評価 小田俊理 平成9年度重点領域研究報告会;
東京;(1998)
  原子層MOCVD法による高誘電体超格子薄膜の作製 小田俊理、
王在陽
重点領域研究「知能集積エレクトロニクス」9年度シンポジウム;
東京;(1998)
  Preparation of high-quality thinfilms for vortex devices by atomic layer MOCVD S.Oda,
S.Yamamoto and
S.Sugai
10年度特定領域研究「ボルテックス・エレクトロニクス」第1回全体会議 ;
須磨 (1998)
  Atomically Controlled Interface of Superconductor Hybrid System S.Yamamoto,
S.Sugai,
S.Suzuki,
A.Kawaguchi and
S.Oda
Special Session for Superconductive Devices 25-30;
Tokyo (1998)
  原子層MOCVD法によるスーパーセラミックス超格子薄膜の作製と評価 小田俊理 NSG Found. Mat. Sci.Eng. Rep;(1998)
  ケンブリッジ大学の産学協同システムについて 小田俊理 東京工大クロニクル;(1998)
  21世紀の電子デバイスFED-PDIジョイントコンファレンス 小田俊理 FED Journal; (1998)
  FED-PDI Joint Conference on 21st Century Electron Devices D.F.Moore,
K.H.Ploog and
S.Oda
FED Journal;
9; 48-49; (1998)


1997

   Journal Papers


Atomic layer-by-layer epitaxy of oxide superconductors by MOCVD S.Yamamoto,
A.Kawaguchi,
K.Nagata,
T.Hatori and
S.ODA
Applied Surface Science;
112; L30-L37 (1997)
  Junction Formation in YBaCuO Thin Films by Scanning Probe S.Yamamoto,
T.Watanabe and
S.ODA
J. Low. Temp. Physics;
106; 423-432 (1997)
   Preparation of Nanocrystalline Silicon Quantum Dot Structure by Pulsed Plasma Processes S. Oda Adv. Colloid and Interface Sci.;
71-72; 31-47 (1997)
Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma T.Ifuku,
M.Otobe,
A.Itoh and
S.Oda
Japanese Journal of Applied Physics;
36(6B) L4031-L4034 (1997)
Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing A.Dutta,
M.Kimura,
Y.Honda,
M.Otobe,
A.Itoh and
S.Oda
Japanese Journal of Applied Physics;
36
(6B) L4038-L4041 (1997)
Photoluminescnce Mechanism in Surface-Oxidized Silicon Nanocrystals Y.Kanemitsu,
S.Okamoto,
M.Otobe and
S.Oda
Phys. Rev. B;
55; R7375-R7378 (1997)
  単電子デバイス・回路の研究状況と今後の 展望 (invited) 田部道晴、
小田俊理、
平本俊郎、
中里和郎、
雨宮好仁
応用物理;
66; 99-108 (1997)
  Grain-Size Control of Nanocrystalline Silicon by Pulsed Gas Plasma Process A.Itoh,
T.Ifuku,
M.Otobe and
S.Oda
Materials Research Society Symposium Proceedings;
452; 749-754 (1997)
Anomalous Current-Voltage Characteristics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography S. Yamamoto,
A. Kawaguchi and
S. Oda
Phisica C;
293
; 244-248 (1997)
Proposal of coplanar-type high-Tc superconducting field-effect devices S.Suzuki and
S.Oda
Phisica C;
282-287; 2495-2496 (1997)


   International Conferences

  Proposal of Coplanar-type high-Tc superconducting field-effect devices S.Suzuki and
S.Oda
M2S-HTSC-V Abstract ;
287 (1997)
  Anomalous Current-Voltage Characteristics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography S. Yamamoto,
A. Kawaguchi and
S. Oda
Int. Symp. Intrinsic Josephson Effect and THz Plasma Oscillations in High Tc Superconductors (1997)
  Fabrication of Coplanar-type high-Tc superconducting field-effect devices (invited) S.Suzuki and
S.Oda
5th Int. Workshop on High-Temperature Superconducting Electron Devices;
Matsuyama (1997)
  Fabrication of Silicon Quantum Dots by Pulsed-Gas Plasma Processes and Their Properties (invited) S. Oda Int. Symp. Nanostructures; Phys. Technol. St. Petersburg ; 281
(1997)
  Grouth Mechanism of YBCO thinfilms by MOCVD(invited) S. Oda Int. Workshop on Superconductivity ;
Hawaii (1997)
   Fabrication and Electrical Properties of Silicon Nanocrystals Amit Dutta,
Y.Kinugasa,
A.Itoh and
S.Oda
Silicon Nanoelectronics Workshop;
Kyoto; (1997)
  Single Electron Tunneling in Silicon Quantum Dots Prepared by Plasma Processing (invited) S. Oda Symp. Solid State Physics;
Kunsan, Korea; July; (1997)
  Single Electron Devices Based on Silicon Quantum Dots (invited) S. Oda 20th Electrical Engineering Conference;
Bangkok, Thailand; (November,1997)
  Fabrication and Characterization of Silicon Quantum Dots (invited) S. Oda and
A Dutta
3rd Int. Workshop on Quantum Functional Devices; Gaithersburg, MD,
USA; November; (1997)


   Domestic Conferences

  A Proposal for Measurement of Electrical Characteristics of a Single Silicon Quantum Dot Deposited by Very High Frequency Plasma Process A. Dutta,
S. Kawakami,
Y. Kinugasa,
A. Itoh,
S. Vyshenski and
S.Oda
第44回応用物理学関係連合講演会 (1997)
  Proposal of coplanar-type high-Tc superconducting field-effect devices S.Suzuki and
S.Oda
Phisica C (1997)
  Fabrication of the coplanar-type superconducting electric field-effect device S.Suzuki,
H.Tobisaka and
S.Oda
第44回応用物理学関係連合講演会 (1997)
  Current-voltage characteristics of intrinsic Josephson junction using YBCO thin films A.Kawaguchi,
S.Yamamoto and
S.Oda
第44回応用物理学関係連合講演会 (1997)
  Real-time measurement of the concentration pf DPM compounds by concentration measurement system using ultrasonics K.Nagata,
S.Yamamoto,
T.Hattori and
S.Oda
第44回応用物理学関係連合講演会 (1997)
  anoscale Electron Beam Lithography Using RD2000N Negative-ion Resist and Fabrication of Silicon Nanodevice Structures A. Dutta,
S. P. Lee,
Y. Hayafune,
K. Nishiguchi and
S. Oda
第58回応用物理学会学術講演会;
秋田, October, (1997)
  原子層MOCVD法で作製したSrTiO3薄膜のX線回折及びAFMによる評価 王在陽、
鈴木武史、
小田俊理
第58回応用物理学会学術講演会;
秋田, October, (1997)
  サイドゲートを有するステップエッジ接合の電界効果 鈴木茂、
須貝聡、
鳶坂浩志、
小田俊理
第58回応用物理学会学術講演会;
秋田, October, (1997)
  MOCVD法によるYBaCuO薄膜上への極薄絶緑層の作製 山本修一郎、
鳶坂浩志、
須貝聡、
小田俊理
第58回応用物理学会学術講演会;
秋田, October, (1997)
  ナノクリスタルシリコンの粒径・位置制御と電子デバイ スへの応用 (invited) 小田俊理 第58回応用物理学会学術講演会;
秋田, October, (1997)
  シリコン量子ドットの表面酸化膜制御と単電子輸送  (invited) アミット・ダッタ、
小田俊理
第58回応用物理学会学術講演会;
秋田, October, (1997)  
  原子層MOCVD法により作製したYBa2Cu3Ox薄膜の分光エリプソメトリーによる評価 鳶坂浩志、
山本修一郎、
小田俊理
第58回応用物理学会学術講演会;
秋田, October, (1997)
  ナノクリスタルシリコン(nc-Si)の粒径制御 絹笠幸久、
原聡二、
伊福徹、
伊藤明、
小田俊理
第58回応用物理学会学術講演会;
秋田, October, (1997)
  超音波濃度計によるDPM系原料のリアルタイム濃度測定(・) 長田浩二、
山本修一郎、
服部健雄、
小田俊理
第58回応用物理学会学術講演会;
秋田, October, (1997)
  高温超伝導平面型電界効果素子 (invited)  鈴木茂、
小田俊理
日本学術振興会 超伝導エレクトロニクス第146委員会第60回研究会資料; 23-27
室蘭, July, (1997)


   Others

  原子層MOCVD法による超低〜超高誘電体多層格子酸化膜の作製 小田俊理、
伊藤明
平成8年度重点領域研究報告会; 194-197;
March (1997)
  シリコン量子ドットの表面制御と単電子トンネル特性評価 小田俊理、
伊藤明
平成8年度重点領域研究報告会; 75-78;
February (1997)
  ナノスケール電子デバイスFEDケンブリッジジョイントコンファレンス報告 小田俊理 FEDジャーナル; 7/2; 63-66 (1997)




1996

   Journal Papers

  Preferential Nucleation of Nanocrystalline Silicon along Microsteps M.Otobe,
J.Kawahara and
S.Oda
Japanese Journal of Applied Physics,
35
[2] 1325-1328 (1996)
  Nanocrystalline silicon formation in a SiH4 plasma cell M.Otobe,
T.Kanai,
T.Ifuku,
H.Yajima and
S.Oda
Journal of Non-Crystalline Solids [198-200] 875-878 (1996)
  Preparation of Thin Films of YBa2Cu30x with a Smooth Surface by Atomic Layer MOCVD S.Yamamoto,
A.Kwaguchi and
S.Oda
Mat. Sci. Eng. B 87-92 (1996)




   International Conferences


  Coulomb staircase characteristics in silicon quantum dots fabricated by plasma processing S.Oda,
M.Kimura and
M.Otobe
Silicon Nanoelectronics Workshop, Honolulu (1996)
   Atomic layer-by-layer epitaxy of oxide superconductors by MOCVD (invited) S.Oda 4th Int. Symp. Atomic Layer Epitaxy; 30-37;
Linz,Austria ; (1996)
   Fabrication of Silicon Quantum Dots by Plasma Processing (invited) S.Oda Cambridge-FED Workshop on Future Nano-scale Electron Devices;
Cambridge, UK ; (1996)
  Atomic layer-by-layer MOCVD of thinfilms of Oxide superconductors (invited) S.Oda Int. Workshop on Chemical Designing and Processing of High-Tc Superconductors II;
Yokohama ; (1996)  
  unction Formation in YBaCuO Thin Films bu Scanning ProbeJ S.Oda Weak Superconductivity Symposium; 423-432;
Smolenice, Slovakia; (1996)



   Domestic Conferences


  プラズマプロセスによるシリコン量子ドットの作製と物性評価 小田俊理、
乙部雅則、
木村匡雄、
伊福徹、
矢島弘士、
大西満
応用電子物性分科会誌、
[2]1, 30-35 (1996)
  原子層MOCVD法による超低〜超高誘電体多層超格子酸化膜の作製 小田俊理 平成7年度重点領域研究報告会「極限集積化シリコン知能エレクトロニクス」報告会, 194-199 (1996)
   ナノ結晶Si擬1次元SET接合アレイの作製と評価 木村匡雄、
乙部雅則、
小田俊理
第43回応用物理学関係連合講演会, 26p-ZA-1 (1996)
  ガスパルス供給プラズマを用いた粒径 8nm±1nmの微結晶Siの作製 伊福徹、
部雅則、
小田俊理
第43回応用物理学関係連合講演会, 26a-TC-1 (1996)
  AFMによるナノ結晶Siの位置制御 乙部雅則、
大西満、
小田俊理
第43回応用物理学関係連合講演会,29a-ZX-1 (1996)
  ナノ結晶Siからの室温クーロン階段の粒径依存性 乙部雅則、
矢島弘士、
小田俊理
第43回応用物理学関係連合講演会, 26p-ZA-2 (1996)
  原子層MOCVD法によるSm3O3/YBa2Cu3Ox積層構造の作製 山本修一郎、
鳶坂浩志、
小田俊理
第57回応用物理学会学術講演会, 7a-SKA-17(1996)
  AFMリソグラフィーによる薄膜イントリンシックジョセフソン接合の作製 川口篤史、
山本修一郎、
小田俊理
第57回応用物理学会学術講演会, 7p-KB-4 (1996)
  シリコン量子ドットの表面酸化 伊福徹、
伊藤明、
小田俊理
第57回応用物理学会学術講演会, 9a-B-8 (1996)


1995

   Journal Papers

  'Computer Simulation and Measurement of Capacitance-Voltage Characteristics in Quantum Wire Devices of Trench-Oxide MOS Structure T.Tsukui and
S.Oda
Jpn. J. Appl. Phys.,
34, pp. 874-877 (1995)
  'Superconductivity and Surface Morphology of YBCO Thin Films Prepared by Metalorganic Chemical Vapor Deposition' S.Oda,
H.Zama and
S.Yamamoto
IEEE Transactions on Applied Superconductivity,
5
, pp.1801-1804 (1995)
  'Preparation of Nanocrystalline Silicon by Pulsed Plasma Processing' S.Oda and
M.Otobe
Mat. Res. Soc. Symp. Proc.,
358, pp. 721-731 (1995)
  'Nanocrystalline Silicon Formed in Very-High-Frequency SiH4 Plasma ' M.Otobe,
T.Kanai,
H.Honji,
M.Kimura and
S.Oda
Proc. 12th Symp. Plasma Processing, (1995)
   'Atomic Layer MOCVD of Thin Films of Oxide Superconductors' S.Yamamoto
A.Kwaguchi and
S.Oda
1st T.I.T. International Symposium on Oxide Electronics, pp.17-21(1995)
   'Farication of Nano-crystalline Si by SiH4 Plasma Cell' M.Otobe,
T.Kanai and
S.Oda
Mat. Res. Soc. Symp. Proc., (1995)
  'Atomic Layer MOCVD of YBa2Cu3Ox Films' S.Oda Mat. Res. Soc. Symp.Spring Meeting Abstracts, P. 201 (1995)
  'Fabrication of Nanocrystalline Silicon Using VHF Plasma Cells of SiH4 and H2 S.Oda and
M.Otobe